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High-k materials for high capacitors for BCD and Power discrete Characterization of 2D materials (MoS2) and Si nanowires Magnetic multilayers for spintronics (p-MTJ, i-MTJ, MRAM, STT-RAM, shift register) Dilute magnetic oxides (Fe-, Ni-doped ZrO2) X-ray scattering on thin films and multilayers (X-ray reflectivity, X-ray diffraction) X-ray resonant magnetic scattering Secondary Ion Mass Spectrometry (ToF-SIMS, D-SIMS, S-SIMS) X-ray Photoelectron Spectroscopy Raman Spectroscopy
Dr. Alessio Lamperti graduated in Nuclear Engineering (M.Sci.) at Politecnico di Milano (Milano, Italy) with a project thesis on the structural characterisation of hydrogenated and fluorinated amorphous carbon thin films. After, he obtained the Ph.D. degree "cum laude" in Radiation Science and Technology at Politecnico di Milano (Milano, Italy) in a joint research project with The University of Chicago, The Enrico Fermi Institute (Chicago, USA) financed by a fellowship from Assolombarda (the association of industry in region Lombardy); his Ph.D. thesis focused on use of Secondary Ion Mass Spectrometry (SIMS) as an analytical technique with nanometric lateral resolution to investigate materials science surfaces and cell biology insights. He got a Post-Doc Marie Curie Fellowship with the EU-RTN Ultrasmmoth at the University of Durham (Durham, UK) where he focussed his research on the investigation of thin films, stackings and multilayers for spintronics mainly using x-ray scattering techniques, also using synchrotron light at the Synchrotron Radiation Source -SRS- (Daresbury, UK) and the European Synchrotron Radiation Facility -ESRF- (Grenoble, France). He also contributed to Polarised Neutron Reflectivity experiments at Institut Laue Langevin -ILL- (Grenoble, France). In May 2007, he joined the Materials and Devices for Microelectronics -MDM- Laboratory as Post-Doc Fellow within the EMMA project, focussing his major activities on the structural and physical-chemical characterisation of thin films and layers of transition metals and their binary oxides for MIM applications. From September 2008, he holds a Research Scientist position and broadened his research in the field of emerging concepts for innovative non volatile memories, mainly devoting his attention on the study of charge-trapping (TANOS) stacks incorporating materials with high dielectric constant (high-k) and, currently, on magnetic storage concepts implementing p-MTJs, for STT-RAM or shift register devices, including mature materials, such as CoFeB/MgO, and explorative solutions explorative solutions implementing magnetically doped high-k materials for foreseen MTJs or spin injectors. He also contributed to the characterization of high-k oxides on high mobility substrates (Ge, GaAs). He mainly uses X-Ray scattering techniques (eg.: reflectivity -XRR-, grazing incidence diffraction -GIXRD-) and TOF-SIMS depth profiles. He also is experienced in Visible Raman Spectroscopy, FT-IR.
Scientific Production
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing
Advanced Materials Interfaces [], Volume: 7 Issue: 19 Pages: 2000905
Changing the Electronic Polarizability of Monolayer MoS2 by Perylene‐Based Seeding Promoters
Advanced Materials Interfaces [], Pages: 2000791
Physical Review Materials [American Physical Society], Volume: 4 Issue: 5 Pages: 054417
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020)(May 10-14, 2020) [ECS],
ECS Meeting Abstracts [IOP Publishing], Issue: 1 Pages: 22
ACS Applied Electronic Materials [American Chemical Society], Volume: 2 Issue: 5 Pages: 1186-1192
Growth of 2D-molybdenum disulfide on top of magnetite and iron by chemical methods
Thin Solid Films [Elsevier], Pages: 137943
Nano Energy [Elsevier], Volume: 68 Pages: 104281
Nano Energy [Elsevier], Volume: 68 Pages: 104281
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Fabrication of ordered Sb-Te and In-Ge-Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Epitaxial and large area Sb 2 Te 3 thin films on silicon by MOCVD
RSC Advances [Royal Society of Chemistry], Volume: 10 Issue: 34 Pages: 19936-19942
Materials [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 12 Pages: 2786
Stability and universal encapsulation of epitaxial Xenes
Faraday Discussions [Royal Society of Chemistry],
EPJ Web of Conferences [EDP Sciences], Volume: 238 Pages: 07006
Nonvolatile Ionic Modification of the Dzyaloshinskii-Moriya Interaction
Physical Review Applied [American Physical Society], Volume: 12 Issue: 3 Pages: 034005
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth
Small [], Volume: 15 Issue: 37 Pages: 1901743
Large-area patterning of substrate-conformal MoS2 nano-trenches
Nano Research [Tsinghua University Press], Volume: 12 Issue: 8 Pages: 1851-1854
Materials Characterization [Elsevier], Volume: 153 Pages: 92-102
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 474 Pages: 632-636
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 37 Issue: 2 Pages: 021205
Si and Sn doping of ε-Ga2O3 layers
APL Materials [AIP Publishing LLC], Volume: 7 Issue: 3 Pages: 031114
Physical Review B [American Physical Society], Volume: 99 Issue: 5 Pages: 054431
Physical Review Applied [American Physical Society], Volume: 10 Issue: 6 Pages: 064053
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland],
Interface phenomena between CdTe and ZnTe: Cu back contact
Solar Energy [Pergamon], Volume: 176 Pages: 186-193
Sensors and Actuators A: Physical [Elsevier], Volume: 282 Pages: 124-131
ACS Applied Nano Materials [American Chemical Society], Volume: 1 Issue: 9 Pages: 4633-4641
Ultrafast Anisotropic Exciton Dynamics In Nanopatterned MoS2 Sheets
ACS Photonics [American Chemical Society], Volume: 5 Issue: 8 Pages: 3363-3371
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 36 Issue: 2 Pages: 02D404
Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 9 Issue: 1 Pages: 890-899
Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets
Advanced materials [], Volume: 30 Issue: 9 Pages: 1705615
Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO 2
Journal of Materials Chemistry C [Royal Society of Chemistry], Volume: 6 Issue: 1 Pages: 119-126
Influence of Block Copolymer feature size on Reactive Ion Etching pattern transfer into silicon.
Nanotechnology [IOP Publishing], Volume: 28 Issue: 40 Pages: 404001
Thin Solid Films [Elsevier], Volume: 636 Pages: 78-84
arXiv preprint arXiv:1706.00340 [],
Anisotropic MoS2 Nanosheets Grown on Self‐Organized Nanopatterned Substrates
Advanced Materials [], Volume: 29 Issue: 19 Pages: 1605785
Anisotropic ultrafast response of MoS $ _ {\mathrm {2}} $ on rippled substrates
Bulletin of the American Physical Society [American Physical Society], Volume: 62
Anisotropic ultrafast response of MoS2 on rippled substrates
APS [], Volume: 2017 Pages: V30. 013
Simulation [], Volume: 69 Pages: 72
Electronic Band Structure of undoped and P-doped Si Nanocrystals embedded in SiO 2
Journal of Materials Chemistry C [Royal Society of Chemistry],
Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets
Advanced Materials [],
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
Advanced Electronic Materials [], Volume: 2 Issue: 10 Pages: 1600330
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 34 Issue: 5 Pages: 051510
(Invited) Silicon Nanowires: Donors, Surfaces and Interface Defects
ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 4 Pages: 179-187
Silicon Nanowires: Donors, Surfaces and Interface Defects
ECS Transactions [IOP Publishing], Volume: 75 Issue: 4 Pages: 179
Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals
Advanced Electronic Materials [], Volume: 2 Issue: 6 Pages: 1600091
Electron Confinement at the Si/MoS2 Heterosheet Interface
Advanced Materials Interfaces [], Volume: 3 Issue: 10 Pages: 1500619
Applied Surface Science [North-Holland], Volume: 368 Pages: 470-476
Atomic Layer Deposition of hexagonal ErFeO 3 thin films on SiO 2/Si
Thin Solid Films [Elsevier], Volume: 604 Pages: 18-22
Nanotechnology [IOP Publishing], Volume: 27 Issue: 17 Pages: 175703
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 5 Issue: 4 Pages: P3138
Defects and Dopants in Silicon and Germanium Nanowires
ECS Transactions [IOP Publishing], Volume: 69 Issue: 5 Pages: 69
(Invited) Defects and Dopants in Silicon and Germanium Nanowires
ECS Transactions [The Electrochemical Society], Volume: 69 Issue: 5 Pages: 69-79
Applied Physics Letters [AIP Publishing LLC], Volume: 107 Issue: 3 Pages: 032401
Electron confinement at the Si-MoS2 heterosheet junction
Bulletin of the American Physical Society [American Physical Society], Volume: 60
Physical Review B [American Physical Society], Volume: 91 Issue: 1 Pages: 014433
Physical Review B [American Physical Society], Volume: 90 Issue: 20 Pages: 205201
Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 12 Pages: 121903
Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires
arXiv preprint arXiv:1409.3753 [],
Thin solid films [Elsevier], Volume: 563 Pages: 44-49
Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 17 Pages: 17D907
Electronic and magnetic properties of iron doped zirconia: Theory and experiment
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 17 Pages: 17D718
Simulation Study of the Trapping Properties of ${\ rm HfO} _ {2} $-Based Charge-Trap Memory Cells
IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 6 Pages: 2056-2063
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 47 Issue: 10 Pages: 102002
Applied Surface Science [North-Holland], Volume: 291 Pages: 3-5
Applied surface science [North-Holland], Volume: 291 Pages: 3-5
Low-temperature atomic layer deposition of MgO thin films on Si
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 48 Pages: 485304
High temperature thermal conductivity of amorphous Al2O3 thin films grown by low temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 18 Pages: 182401
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 9 Pages: P395
Thermal resistance at Al-Ge2Sb2Te5 interface
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 18 Pages: 181907
Exploiting magnetic properties of Fe doping in zirconia
The European Physical Journal B [Springer-Verlag], Volume: 86 Issue: 5 Pages: 211
Thin solid films [Elsevier], Volume: 533 Pages: 75-78
Thin Solid Films [Elsevier], Volume: 533 Pages: 79-82
Atomic layer-deposited Al–HfO 2/SiO 2 bi-layers towards 3D charge trapping non-volatile memory
Thin Solid Films [Elsevier], Volume: 533 Pages: 9-14
Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition
Thin Solid Films [Elsevier], Volume: 533 Pages: 83-87
ECS Transactions [IOP Publishing], Volume: 50 Issue: 13 Pages: 11
Role of oxygen vacancies on the structure and density of states of iron-doped zirconia
Physical Review B [American Physical Society], Volume: 87 Issue: 8 Pages: 085206
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications
ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 1 Pages: N1-N5
Surface and interface analysis [], Volume: 45 Issue: 1 Pages: 390-393
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 1 Pages: N1
Inverse Problems in Science and Engineering [Taylor & Francis Group], Volume: 20 Issue: 7 Pages: 941-950
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 1 Issue: 1 Pages: P5
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 1 Pages: 014107
Meeting Abstracts [The Electrochemical Society], Issue: 28 Pages: 2457-2457
Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4617-4621
Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4617-4621
Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4820-4822
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 9 Pages: 093501
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 7 Pages: 07B107
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer
Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 6 Pages: H555
Effects of thermal treatments on the trapping properties of HfO2 films for charge trap memories
Applied Physics Express [IOP Publishing], Volume: 5 Issue: 2 Pages: 021102
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 23 Pages: 232907
Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 17 Pages: 172101
ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221
ECS Transactions [IOP Publishing], Volume: 41 Issue: 3 Pages: 203
Journal of nuclear materials [North-Holland], Volume: 416 Issue: 1-2 Pages: 173-178
Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 10 Pages: G221
Microelectronic engineering [Elsevier], Volume: 88 Issue: 7 Pages: 1174-1177
Detection of the tetragonal phase in atomic layer deposited La-doped ZrO2 thin films on germanium
Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 8 Pages: G194
Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406
ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 481
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 518-521
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 3 Pages: 034506
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 29 Issue: 1 Pages: 01AE04
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 29 Issue: 1 Pages: 01AE03
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 268 Issue: 19 Pages: 3132-3136
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 43 Issue: 6 Pages: 065002
Proc. ESSDERC, 2010 Proc. ESSDERC, 2010 408, 2010
Proc. ESSDERC [], Volume: 408
Heteroepitaxial sputtered Ge on Si (100): Nanostructure and interface morphology
EPL (Europhysics Letters) [IOP Publishing], Volume: 88 Issue: 2 Pages: 28005
Transition Metal Binary Oxides for ReRAM Applications
ECS Transactions [IOP Publishing], Volume: 25 Issue: 6 Pages: 411
Dehydrogenation at the Fe/Lu 2 O 3 interface upon rapid thermal annealing
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing
Journal of magnetism and magnetic materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si (100)
Microelectronic engineering [Elsevier], Volume: 86 Issue: 7-9 Pages: 1696-1699
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2425-2429
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093534
Thin Solid Films [Elsevier], Volume: 516 Issue: 22 Pages: 7962-7966
Ferromagnetic resonance linewidth reduction in Fe∕ Au multilayers using ion beams
Journal of Applied Physics [American Institute of Physics], Volume: 103 Issue: 7 Pages: 07B518
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 20 Issue: 10 Pages: 104217
Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment
Journal of Applied Crystallography [International Union of Crystallography], Volume: 41 Issue: 1 Pages: 143-152
Layer and Interface Structure of CoFe/Ru Multilayers
ACTA PHYSICA POLONICA SERIES A [POLISH ACADEMY OF SCIENCES WARSAW], Volume: 112 Issue: 6 Pages: 1243
Element specific separation of bulk and interfacial magnetic hysteresis loops
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 13 Pages: 132510
Exchange coupling between an amorphous ferromagnet and a crystalline antiferromagnet
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 5 Pages: 053911
Interface stability of magnetic tunnel barriers and electrodes
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 204 Issue: 8 Pages: 2778-2784
Morphological and structural studies of WOx thin films deposited by laser ablation
Applied surface science [North-Holland], Volume: 253 Issue: 19 Pages: 8258-8262
Morphological and structural studies of WO x thin films deposited by laser ablation
Applied surface science [North-Holland], Volume: 253 Issue: 19 Pages: 8258-8262
高誘電率ゲート絶縁膜の信頼性 (先端 LSI 技術と信頼性)
日本信頼性学会誌 信頼性 [日本信頼性学会], Volume: 29 Issue: 4 Pages: 198-205
Interface stability in CoFe and CoFeB based multilayers
Superlattices and Microstructures [Academic Press], Volume: 41 Issue: 2-3 Pages: 122-126
Surface analytical chemical imaging and morphology of Cu–Cr alloy
Surface and Coatings Technology [Elsevier], Volume: 200 Issue: 22-23 Pages: 6373-6377
Interface sharpening in CoFeB magnetic tunnel junctions
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 16 Pages: 162505
SIMS direct surface imaging of Cu 1− x Cr x formation
Applied surface science [North-Holland], Volume: 252 Issue: 6 Pages: 2288-2296
Appl. Phys. Lett [], Volume: 89 Pages: 082908
Elemental distribution in fluorinated amorphous carbon thin films
Journal of the American Society for Mass Spectrometry [Springer-Verlag], Volume: 16 Issue: 1 Pages: 126-131
Electric field control of magnetism
Spintronics XIII [International Society for Optics and Photonics], Volume: 11470 Pages: 114703G
Simulation of micro-mirrors for optical MEMS
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) [IEEE], Pages: 81-84
Optical characterization of anisotropic MoS 2 nanosheets
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) [IEEE], Pages: 1-1
Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface
E-MRS spring meeting [],
Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application
Advances in Science and Technology [Trans Tech Publications Ltd], Volume: 95 Pages: 113-119
Magnetic domain-wall racetrack memory for high density and fast data storage
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology [IEEE], Pages: 1-4
Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories
2010 Proceedings of the European Solid State Device Research Conference [IEEE], Pages: 408-411
FOTONICA-2009 [ITA], Pages: B5. 6-1-B5. 6-4
FOTONICA-2009 [ITA], Pages: B5. 6-1-B5. 6-4
Near surface damage characterisation of biomedical grade Y-TZP
TISSUE ENGINEERING [MARY ANN LIEBERT INC], Volume: 13 Issue: 6 Pages: 1388-1388
Predicting structural stability of ion bombarded thin films
Intl. Vacuum Conf. 16 [Editrice Compositori], Pages: 269-276
Predicting structural stability of ion bombarded thin films
Intl. Vacuum Conf. 16 [Editrice Compositori], Pages: 269-276
Magnetic Nano-and Microwires [Elsevier], Volume: 27 Issue: 3 Pages: 333-378
Magnetic Nano-and Microwires [Woodhead Publishing], Pages: 333-378
Mössbauer spectroscopy study of interfaces for spintronics
ISIAME 2008 [Springer, Berlin, Heidelberg], Pages: 371-376