-A A +A
Surname: 
Fanciulli
Firstname: 
Marco
Position: 
Associate
Profile: 
Professor
Phone: 
039/6036253

Scientific Production

DV Azamat, AG Badalyan, PG Baranov, M Fanciulli, J Lanc̆ok, M Hrabovsky, L Jastrabik, A Dejneka

Spin-lattice relaxation processes of transition metal ions in a heavily cobalt doped ZnO: Phonon heating effect

Journal of Applied Physics [AIP Publishing], Volume: 126 Issue: 12 Pages: 123903

E Ferraro, M Fanciulli, M De Michielis

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots

Physical Review B [APS], Volume: 100 Pages: 035310

M Belli, M Fanciulli, R de Sousa

Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO interface

arXiv preprint arXiv:1904.01984 [],

E Longo, C Wiemer, R Cecchini, M Longo, A Lamperti, A Khanas, A Zenkevich, M Fanciulli, R Mantovan

Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface

Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 474 Pages: 632-636

R Cecchini, S Selmo, C Wiemer, M Fanciulli, E Rotunno, L Lazzarini, M Rigato, D Pogany, A Lugstein, M Longo

In-doped Sb nanowires grown by MOCVD for high speed phase change memories.

Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121

Andrea Marzo, Amal Eleonora Mahajneh, Simone Mattavelli, Elisa Vitiello, Fabio Pezzoli, Emiliano Bonera, Massimiliano D’Arienzo, Marco Fanciulli

Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles.

Journal of Materials Chemistry C [Royal Society of Chemistry], Volume: 7 Issue: 42 Pages: 13261-13266

Mariona Coll, Josep Fontcuberta, M Althammer, Manuel Bibes, H Boschker, Albert Calleja, G Cheng, M Cuoco, R Dittmann, B Dkhil, I El Baggari, M Fanciulli, Ignasi Fina, E Fortunato, Carlos Frontera, S Fujita, V Garcia, STB Goennenwein, Claes Göran Granqvist, J Grollier, R Gross, Anders Hagfeldt, Gervasi Herranz, K Hono, E Houwman, M Huijben, A Kalaboukhov, DJ Keeble, G Koster, LF Kourkoutis, J Levy, Mónica Lira-Cantu, JL MacManus-Driscoll, Jochen Mannhart, R Martins, S Menzel, T Mikolajick, M Napari, MD Nguyen, Gunnar Niklasson, C Paillard, S Panigrahi, G Rijnders, F Sánchez, P Sanchis, S Sanna, DG Schlom, U Schroeder, KM Shen, A Siemon, M Spreitzer, H Sukegawa, R Tamayo, J Van den Brink, N Pryds, F Miletto Granozio

Towards Oxide Electronics: A Roadmap

Applied surface science [Elsevier], Volume: 482 Pages: 1-93

A Digiacomo, R Mantovan, N Vernier, T Devolder, K Garcia, G Tallarida, M Fanciulli, A Lamperti, B Ocker, L Baldi, M Mariani, D Ravelosona

Engineering Domain-Wall Motion in Ultrathin Films with Perpendicular Anisotropy Using Patterned Substrates with Subnanometer Step Modulation

Physical Review Applied [American Physical Society], Volume: 10 Issue: 6 Pages: 064053

E Longo, C Wiemer, R Cecchini, M Longo, A Lamperti, A Khanas, A Zenkevich, M Fanciulli, R Mantovan

Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface

Journal of Magnetism and Magnetic Materials [North-Holland],

Elena Ferraro, Marco Fanciulli, Marco De Michielis

Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions

Advanced Quantum Technologies [], Volume: 1 Issue: 3 Pages: 1800040

Valerio Pinchetti, Abhinav Anand, Quinten A Akkerman, Davide Sciacca, Monica Lorenzon, Francesco Meinardi, Marco Fanciulli, Liberato Manna, Sergio Brovelli

Trap-Mediated Two-Step Sensitization of Manganese Dopants in Perovskite Nanocrystals

ACS Energy Letters [American Chemical Society], Volume: 4 Issue: 1 Pages: 85-93

E Ferraro, M Fanciulli, M De Michielis

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

Journal of Physics Communications [IOP Publishing], Volume: 2 Issue: 11 Pages: 115022

R Cecchini, S Selmo, C Wiemer, M Fanciulli, E Rotunno, L Lazzarini, M Rigato, D Pogany, A Lugstein, M Longo

In-doped Sb nanowires grown by MOCVD for high speed phase change memories

Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121

Federico Locardi, Matilde Cirignano, Dmitry Baranov, Zhiya Dang, Mirko Prato, Filippo Drago, Maurizio Ferretti, Valerio Pinchetti, Marco Fanciulli, Sergio Brovelli, Luca De Trizio, Liberato Manna

Colloidal Synthesis of Double Perovskite Cs2AgInCl6 and Mn-doped Cs2AgInCl6 Nanocrystals

Journal of the American Chemical Society [American Chemical Society], Volume: 140 Issue: 40 Pages: 12989-12995

E Ferraro, M Fanciulli, M De Michielis

Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises

Quantum Information Processing [Springer US], Volume: 17 Issue: 6 Pages: 130

Elena Ferraro, Marco Fanciulli, Marco De Michielis

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Quantum Information Processing [Springer US], Volume: 17 Issue: 6 Pages: 130

Elena Ferraro, Marco Fanciulli, Marco De Michielis

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Quantum Information Processing [Springer US], Volume: 16 Issue: 11 Pages: 277

E Ferraro, M Fanciulli, M De Michielis

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Quantum Information Processing [Springer US], Volume: 16 Issue: 11 Pages: 277

R Mantovan, R Fallica, A Mokhles Gerami, TE Mølholt, C Wiemer, M Longo, HP Gunnlaugsson, K Johnston, H Masenda, D Naidoo, M Ncube, K Bharuth-Ram, M Fanciulli, Hafliði Pétur Gislason, Guido Langouche, Sveinn Olafsson, G Weyer

Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.

Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 8234

J‐L Battaglia, A Saci, I De, R Cecchini, S Selmo, M Fanciulli, S Cecchi, M Longo

Thermal resistance measurement of In3SbTe2 nanowires

physica status solidi (a) [], Volume: 214 Issue: 5

Erika Covi, Stefano Brivio, Jacopo Frascaroli, Marco Fanciulli, Sabina Spiga

Analog HfO2-RRAM Switches for Neural Networks

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 32 Pages: 85-94

Erika Covi, Stefano Brivio, Jacopo Frascaroli, Marco Fanciulli, Sabina Spiga

(Invited) Analog HfO2-RRAM Switches for Neural Networks

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 32 Pages: 85-94

M. Longo J.-L Battaglia, A. Saci, I. De, R. Cecchini, S. Selmo, M. Fanciulli, S. Cecchi

Thermal resistance measurement of In3SbTe2 nanowires

Physica Status Solidi A [], Volume: 214 Issue: 5 Pages: 1600500

Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli

Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Nature communications [Nature Publishing Group], Volume: 7 Pages: 13886

S Selmo, R Cecchini, S Cecchi, C Wiemer, M Fanciulli, E Rotunno, L Lazzarini, M Rigato, D Pogany, A Lugstein, M Longo

Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

Applied Physics Letters [AIP Publishing], Volume: 109 Issue: 21 Pages: 213103

Erika Covi, Stefano Brivio, Alexander Serb, Themis Prodromakis, Marco Fanciulli, Sabina Spiga

Analog memristive synapse in spiking networks implementing unsupervised learning

Frontiers in neuroscience [Frontiers], Volume: 10 Pages: 482

Christian Martella, Pierpaolo Melloni, Eugenio Cinquanta, Elena Cianci, Mario Alia, Massimo Longo, Alessio Lamperti, Silvia Vangelista, Marco Fanciulli, Alessandro Molle

Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Advanced Electronic Materials [], Volume: 2 Issue: 10 Pages: 1600330

Caterina Soldano, Gianluca Generali, Elena Cianci, Grazia Tallarida, Marco Fanciulli, Michele Muccini

Engineering organic/inorganic alumina-based films as dielectrics for red organic light emitting transistors

Thin Solid Films [Elsevier], Volume: 616 Pages: 408-414

S Brivio, E Covi, A Serb, T Prodromakis, M Fanciulli, S Spiga

Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

Applied Physics Letters [AIP Publishing], Volume: 109 Issue: 13 Pages: 133504

Maria Berdova, Xuwen Liu, Claudia Wiemer, Alessio Lamperti, Grazia Tallarida, Elena Cianci, Marco Fanciulli, Sami Franssila

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 34 Issue: 5 Pages: 051510

Sabina Spiga, Brivio Stefano, Erika Covi, Marco Fanciulli, Alexander Serb, Themis Prodromakis, Hesham Mostafa, Giacomo Indiveri

Analog Hfox-Rram Switches for Neural Networks

Meeting Abstracts [The Electrochemical Society], Issue: 16 Pages: 1473-1473

Sabina Spiga, Brivio Stefano, Erika Covi, Marco Fanciulli, Alexander Serb, Themis Prodromakis, Hesham Mostafa, Giacomo Indiveri

(Invited) Analog Hfox-Rram Switches for Neural Networks

Meeting Abstracts [The Electrochemical Society], Issue: 16 Pages: 1473-1473

Marco Fanciulli, Stefano Paleari, Matteo Belli, Alessio Lamperti

Silicon Nanowires: Donors, Surfaces and Interface Defects

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 4 Pages: 179-187

Marco Fanciulli, Stefano Paleari, Matteo Belli, Alessio Lamperti

(Invited) Silicon Nanowires: Donors, Surfaces and Interface Defects

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 4 Pages: 179-187

Davide Rotta, Marco De Michielis, Elena Ferraro, Marco Fanciulli, Enrico Prati

Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture

Quantum Information Processing [Springer US], Volume: 15 Issue: 6 Pages: 2253-2274

Marco Lorenzo Valerio Tagliaferri, Alessandro Crippa, Simone Cocco, Marco De Michielis, Marco Fanciulli, Giorgio Ferrari, Enrico Prati

Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices

IEEE Transactions on Instrumentation and Measurement [IEEE], Volume: 65 Issue: 8 Pages: 1827-1835

Alessandro Molle, Alessio Lamperti, Davide Rotta, Marco Fanciulli, Eugenio Cinquanta, Carlo Grazianetti

Electron Confinement at the Si/MoS2 Heterosheet Interface

Advanced Materials Interfaces [], Volume: 3 Issue: 10 Pages: 1500619

Caterina Soldano, Gianluca Generali, Elena Cianci, Grazia Tallarida, Marco Fanciulli, Michele Muccini

P‐164: Organic Light Emitting Transistors (OLETs) using ALD‐grown Al2O3 dielectric

SID Symposium Digest of Technical Papers [], Volume: 47 Issue: 1 Pages: 1737-1739

A Amorese, Greta Dellea, M Fanciulli, S Seiro, C Geibel, C Krellner, IP Makarova, Lucio Braicovich, G Ghiringhelli, DV Vyalikh, NB Brookes, K Kummer

4 f excitations in Ce Kondo lattices studied by resonant inelastic x-ray scattering

Physical Review B [American Physical Society], Volume: 93 Issue: 16 Pages: 165134

Maria Berdova, Claudia Wiemer, Alessio Lamperti, Grazia Tallarida, Elena Cianci, Luca Lamagna, Stefano Losa, Silvia Rossini, Roberto Somaschini, Salvatore Gioveni, Marco Fanciulli, Sami Franssila

Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

Applied Surface Science [North-Holland], Volume: 368 Pages: 470-476

S Vangelista, A Lamperti, C Wiemer, M Fanciulli, R Mantovan

Atomic Layer Deposition of hexagonal ErFeO 3 thin films on SiO 2/Si

Thin Solid Films [Elsevier], Volume: 604 Pages: 18-22

Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli

Giant g factor tuning of long-lived electron spins in Ge

arXiv preprint arXiv:1603.08783 [],

MLV Tagliaferri, A Crippa, M De Michielis, G Mazzeo, M Fanciulli, E Prati

A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

Physics Letters A [North-Holland], Volume: 380 Issue: 11-12 Pages: 1205-1209

S Selmo, S Cecchi, R Cecchini, C Wiemer, M Fanciulli, E Rotunno, L Lazzarini, M Longo

MOCVD growth and structural characterization of In–Sb–Te nanowires

physica status solidi (a) [], Volume: 213 Issue: 2 Pages: 335-338

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Mauro Sironi, Antonio Pizio

Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 5 Issue: 4 Pages: P3138-P3141

DV Azamat, J Debus, DR Yakovlev, V Yu Ivanov, M Godlewski, M Fanciulli, M Bayer

Ground and excited states of iron centers in ZnO: Pulse-EPR and magneto-optical spectroscopy

Physical Review B [American Physical Society], Volume: 92 Issue: 19 Pages: 195202

E Covi, S Brivio, M Fanciulli, S Spiga

Synaptic potentiation and depression in Al: HfO 2-based memristor

Microelectronic Engineering [Elsevier], Volume: 147 Pages: 41-44

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Alessandro Molle, Mauro Sironi, Antonio Pizio

Defects and Dopants in Silicon and Germanium Nanowires

ECS Transactions [The Electrochemical Society], Volume: 69 Issue: 5 Pages: 69-79

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Alessandro Molle, Mauro Sironi, Antonio Pizio

(Invited) Defects and Dopants in Silicon and Germanium Nanowires

ECS Transactions [The Electrochemical Society], Volume: 69 Issue: 5 Pages: 69-79

A Crippa, MLV Tagliaferri, D Rotta, M De Michielis, G Mazzeo, M Fanciulli, R Wacquez, M Vinet, E Prati

Valley blockade and multielectron spin-valley Kondo effect in silicon

Physical Review B [American Physical Society], Volume: 92 Issue: 3 Pages: 035424

C Grazianetti, D Chiappe, E Cinquanta, M Fanciulli, A Molle

Nucleation and temperature-driven phase transitions of silicene superstructures on Ag (1 1 1)

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 27 Issue: 25 Pages: 255005

Guido Petretto, Andrea Massé, Marco Fanciulli, Alberto Debernardi

Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires

Physical Review B [American Physical Society], Volume: 91 Issue: 12 Pages: 125430

Alessandro Molle, Daniele Chiappe, Davide Rotta, Alessio Lamperti, Carlo Grazianetti, Eugenio Cinquanta, Marco Fanciulli

Electron confinement at the Si-MoS2 heterosheet junction

Bulletin of the American Physical Society [American Physical Society], Volume: 60

Eugenio Cinquanta, Li Tao, Guido Fratesi, Carlo Grazianetti, Marco Fanciulli, Giovanni Onida, Deji Akinwande, Alessandro Molle

Silicene on Silver: fundamental physical properties and integration in Field-Effect Transistors

Bulletin of the American Physical Society [American Physical Society], Volume: 60

Li Tao, Eugenio Cinquanta, Daniele Chiappe, Carlo Grazianetti, Marco Fanciulli, Madan Dubey, Alessandro Molle, Deji Akinwande

Silicene field-effect transistors operating at room temperature

Nature nanotechnology [Nature Publishing Group], Volume: 10 Issue: 3 Pages: 227

E Ferraro, M De Michielis, M Fanciulli, E Prati

Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain

Physical Review B [American Physical Society], Volume: 91 Issue: 7 Pages: 075435

Roberto Mantovan, Haraldur Páll Gunnlaugsson, Karl Johnston, Hilary Masenda, Torben Esmann Mølholt, Deena Naidoo, Mehluli Ncube, Seyedmohammad Shayestehaminzadeh, Krish Bharuth‐Ram, Marco Fanciulli, Haflidi Petur Gislason, Guido Langouche, Sveinn Ólafsson, Lino MC Pereira, Ulrich Wahl, Piero Torelli, Gerd Weyer

Atomic‐Scale Magnetic Properties of Truly 3d‐Diluted ZnO

Advanced Electronic Materials [], Volume: 1 Issue: 1-2 Pages: 1400039

Marco De Michielis, Elena Ferraro, Marco Fanciulli, Enrico Prati

Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling

Journal of Physics A: Mathematical and Theoretical [IOP Publishing], Volume: 48 Issue: 6 Pages: 065304

Elena Ferraro, Marco De Michielis, Marco Fanciulli, Enrico Prati

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Quantum Information Processing [Springer US], Volume: 14 Issue: 1 Pages: 47-65

C. Canevali, M. Alia, M. Fanciulli, M. Longo, R. Ruffo, C. Mari

Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching

Surface & Coatings Technology [Elsevier], Volume: 280 Pages: 37–42

Alessio Lamperti, Alessandro Molle, Elena Cianci, Claudia Wiemer, S Spiga, M Fanciulli

Effect on Al: MO2/In0. 53Ga0. 47As interface (M= Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49

Alessio Lamperti, Alessandro Molle, Elena Cianci, Claudia Wiemer, S Spiga, M Fanciulli

Effect on Al: MO 2/In 0.53 Ga 0.47 As interface (M= Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49

D Rotta, A Vellei, G Mazzeo, M Belli, S Cocco, MLV Tagliaferri, A Crippa, E Prati, M Fanciulli

Spin-dependent recombination and single charge dynamics in silicon nanostructrures

The European Physical Journal Plus [Springer Berlin Heidelberg], Volume: 129 Issue: 6 Pages: 1-4

Emilio Scalise, Michel Houssa, Emilio Cinquanta, Caludio Grazianetti, Bas van den Broek, Geoffrey Pourtois, Andre Stesmans, Marco Fanciulli, Allessandro Molle

Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X= S, Se, Te) chalchogenide templates

2D Materials [IOP Publishing], Volume: 1 Issue: 1 Pages: 011010

R Mantovan, S Vangelista, C Wiemer, A Lamperti, G Tallarida, E Chikoidze, Y Dumont, M Fanciulli

Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

Journal of Applied Physics [AIP], Volume: 115 Issue: 17 Pages: 17D907

Elena Ferraro, Marco De Michielis, G Mazzeo, Marco Fanciulli, Enrico Prati

Effective Hamiltonian for the hybrid double quantum dot qubit

Quantum information processing [Springer US], Volume: 13 Issue: 5 Pages: 1155-1173

Daniele Chiappe, Emilio Scalise, Eugenio Cinquanta, Carlo Grazianetti, Bas van den Broek, Marco Fanciulli, Michel Houssa, Alessandro Molle

Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface

Advanced Materials [], Volume: 26 Issue: 13 Pages: 2096-2101

M Belli, M Fanciulli, D Batani

Electron spin resonance of substitutional nitrogen in silicon

Physical Review B [American Physical Society], Volume: 89 Issue: 11 Pages: 115207

Elena Cianci, Alessandro Molle, Alessio Lamperti, Claudia Wiemer, Sabina Spiga, Marco Fanciulli

Phase Stabilization of Al: HfO2 Grown on In x Ga1–x As Substrates (x= 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461

R Mantovan, S Vangelista, B Kutrzeba-Kotowska, A Lamperti, N Manca, L Pellegrino, M Fanciulli

Fe3− δO4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 47 Issue: 10 Pages: 102002

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge (1 1 1)/GeO2 interface after capping with Al2O3 layer

Applied Surface Science [North-Holland], Volume: 291 Pages: 3-5

Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Exploring the morphological and electronic properties of silicene superstructures

Applied Surface Science [North-Holland], Volume: 291 Pages: 109-112

Michel Houssa, Bas van den Broek, Emilio Scalise, B Ealet, G Pourtois, D Chiappe, E Cinquanta, C Grazianetti, M Fanciulli, A Molle, VV Afanas’Ev, Andre Stesmans

Theoretical aspects of graphene-like group IV semiconductors

Applied Surface Science [North-Holland], Volume: 291 Pages: 98-103

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge (111)/GeO 2 interface after capping with Al 2 O 3 layer

Applied Surface Science [North-Holland], Volume: 291 Pages: 3-5

Emilio Scalise, E Cinquanta, Michel Houssa, Bas van den Broek, D Chiappe, C Grazianetti, G Pourtois, B Ealet, A Molle, M Fanciulli, VV Afanas’Ev, Andre Stesmans

Vibrational properties of epitaxial silicene layers on (111) Ag

Applied Surface Science [North-Holland], Volume: 291 Pages: 113-117

Torben Esmann Mølholt, R Mantovan, HP Gunnlaugsson, A Svane, Hilary Masenda, D Naidoo, Krish Bharuth-Ram, M Fanciulli, HP Gislason, K Johnston, Guido Langouche, S Olafsson, R Sielemann, G Weyer, ISOLDE collaboration

Interstitial Fe in MgO

Journal of Applied Physics [AIP], Volume: 115 Issue: 2 Pages: 023508

P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, EGSA Golias, SA Giamini, C Grazianetti, D Chiappe, A Molle, M Fanciulli, A Dimoulas

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111)

Applied Physics Letters [AIP], Volume: 103 Issue: 25 Pages: 251605

S Vangelista, R Mantovan, A Lamperti, G Tallarida, B Kutrzeba-Kotowska, S Spiga, M Fanciulli

Low-temperature atomic layer deposition of MgO thin films on Si

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 48 Pages: 485304

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Hindering the oxidation of silicene with non‐reactive encapsulation

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4340-4344

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Nanostructures: Hindering the Oxidation of Silicene with Non‐Reactive Encapsulation (Adv. Funct. Mater. 35/2013)

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4339-4339

Guido Petretto, Alberto Debernardi, Marco Fanciulli

Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation

Nano letters [American Chemical Society], Volume: 13 Issue: 10 Pages: 4963-4968

Alessandro Molle, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, Marco Fanciulli, Emilio Scalise, Bas van den Broek, Michel Houssa

(Invited) Structural and Chemical Stabilization of the Epitaxial Silicene

ECS Transactions [The Electrochemical Society], Volume: 58 Issue: 7 Pages: 217-227

Alessandro Molle, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, Marco Fanciulli, Emilio Scalise, Bas van den Broek, Michel Houssa

Structural and chemical stabilization of the epitaxial silicene

ECS Transactions [The Electrochemical Society], Volume: 58 Issue: 7 Pages: 217-227

Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle

Getting through the nature of silicene: An sp2–sp3 two-dimensional silicon nanosheet

The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 32 Pages: 16719-16724

Alessio Corti, Mark Haskins, Johannes Nordström, Tommaso Pacini

Asymptotically cylindrical Calabi–Yau 3–folds from weak Fano 3–folds

Geometry & Topology [Mathematical Sciences Publishers], Volume: 17 Issue: 4 Pages: 1955-2059

Stefano Paleari, Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Evidence of trigonal dangling bonds at the Ge (111)/Oxide interface by electrically detected magnetic resonance

Physical review letters [American Physical Society], Volume: 110 Issue: 20 Pages: 206101

Alessandro Molle, Elena Cianci, Alessio Lamperti, Claudia Wiemer, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Clement Merckling, Matty Caymax

Trimethylaluminum-based Atomic Layer Deposition of MO2 (M= Zr, Hf): Gate Dielectrics on In0. 53Ga0. 47As (001) Substrates

ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 13 Pages: 11-19

Michele Perego, Gabriele Seguini, Marco Fanciulli

ToF‐SIMS study of phosphorus diffusion in low‐dimensional silicon structures

Surface and Interface Analysis [], Volume: 45 Issue: 1 Pages: 386-389

A Lamperti, E Cianci, O Salicio, L Lamagna, S Spiga, M Fanciulli

Thermal stability of high‐κ oxides on SiO2/Si or SixNy/SiO2/Si for charge‐trapping nonvolatile memories

Surface and Interface Analysis [], Volume: 45 Issue: 1 Pages: 390-393

A Molle, E Cianci, A Lamperti, C Wiemer, S Spiga, M Fanciulli

A Viable Route to Enhance Permittivity of Gate Dielectrics on In0. 53Ga0. 47As (001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me= Zr, Hf)

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 9 Pages: P395-P399

Marco De Michielis, Enrico Prati, Marco Fanciulli, Gianluca Fiori, Giuseppe Iannaccone

Geometrical effects on valley-orbital filling patterns in silicon quantum dots for robust qubit implementation

Applied Physics Express [IOP Publishing], Volume: 5 Issue: 12 Pages: 124001

R Mantovan, Haraldur Pall Gunnlaugsson, D Naidoo, S Ólafsson, K Johnston, H Masenda, TE Mølholt, K Bharuth-Ram, M Fanciulli, HP Gislason, Guido Langouche, R Sielemann, G Weyer, Isolde Collaboration

Fe charge state adjustment in ZnO upon ion implantation

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 24 Issue: 48 Pages: 485801

G Petretto, A Debernardi, M Fanciulli

Electronic properties of pristine and Se doped [001] silicon nanowires: an ab initio study

Journal of nanoscience and nanotechnology [American Scientific Publishers], Volume: 12 Issue: 11 Pages: 8704-8709

Daniele Chiappe, Carlo Grazianetti, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Local electronic properties of corrugated silicene phases

Advanced Materials [WILEY‐VCH Verlag], Volume: 24 Issue: 37 Pages: 5088-5093

Carlo Grazianetti, Alessandro Molle, Grazia Tallarida, Sabina Spiga, Marco Fanciulli

Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0. 53Ga0. 47As (001) Surfaces

The Journal of Physical Chemistry C [American Chemical Society], Volume: 116 Issue: 35 Pages: 18746-18751

S Spiga, R Rao, L Lamagna, C Wiemer, G Congedo, A Lamperti, A Molle, M Fanciulli, F Palma, F Irrera

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

Journal of Applied Physics [AIP], Volume: 112 Issue: 1 Pages: 014107

C Wiemer, L Lamagna, M Fanciulli

Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications

Semiconductor Science and Technology [IOP Publishing], Volume: 27 Issue: 7 Pages: 074013

Alessandro Molle, Elena Cianci, Alessio Lamperti, Claudia Wiemer, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Clement Merckling, Matty Caymax

Trimethylaluminum-Based Atomic Layer Deposition of Al: MO2 (M= Zr, Hf): A Viable Route to Integrate High-Permittivity Oxides on In0. 53Ga0. 47As Substrates

Meeting Abstracts [The Electrochemical Society], Issue: 28 Pages: 2457-2457

Enrico Prati, Marco De Michielis, Matteo Belli, Simone Cocco, Marco Fanciulli, Dharmraj Kotekar-Patil, Matthias Ruoff, Dieter P Kern, David A Wharam, Jan Verduijn, Giuseppe C Tettamanzi, Sven Rogge, Benoit Roche, Romain Wacquez, Xavier Jehl, Maud Vinet, Marc Sanquer

Few electron limit of n-type metal oxide semiconductor single electron transistors

Nanotechnology [IOP Publishing], Volume: 23 Issue: 21 Pages: 215204

G Mazzeo, E Prati, M Belli, G Leti, S Cocco, M Fanciulli, F Guagliardo, G Ferrari

Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon

Applied Physics Letters [AIP Publishing], Volume: 100 Issue: 21 Pages: 213107

S Vangelista, R Mantovan, S Cocco, A Lamperti, O Salicio, M Fanciulli

Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions

Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4617-4621

S Vangelista, R Mantovan, S Cocco, A Lamperti, O Salicio, M Fanciulli

Chemical vapor deposition growth of Fe 3 O 4 thin films and Fe/Fe 3 O 4 bi-layers for their integration in magnetic tunnel junctions

Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4617-4621

R Mantovan, S Vangelista, B Kutrzeba-Kotowska, S Cocco, A Lamperti, G Tallarida, D Mameli, M Fanciulli

Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4820-4822

A Zenkevich, M Minnekaev, Yu Lebedinskii, K Bulakh, A Chouprik, A Baturin, R Mantovan, M Fanciulli, O Uvarov

Pulsed laser deposition of ultrathin BaTiO 3/Fe bi-layers: Structural characterization and piezoelectric response

Thin Solid Films [Elsevier], Volume: 520 Issue: 14 Pages: 4586-4589

E Cianci, S Lattanzio, G Seguini, S Vassanelli, M Fanciulli

Atomic layer deposited TiO 2 for implantable brain-chip interfacing devices

Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4745-4748

AV Zenkevich, Yu A Matveyev, Yu Yu Lebedinskii, R Mantovan, M Fanciulli, S Thiess, W Drube

The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si

Journal of Applied Physics [AIP], Volume: 111 Issue: 7 Pages: 07C506

Massimo Longo, Roberto Fallica, Claudia Wiemer, Olivier Salicio, Marco Fanciulli, Enzo Rotunno, Laura Lazzarini

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires

Nano letters [American Chemical Society], Volume: 12 Issue: 3 Pages: 1509-1515

Silvia Baldovino, Alessio Lamperti, Marco Fanciulli, Alessandro Molle

Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 6 Pages: H555-H559

L Lamagna, A Molle, C Wiemer, S Spiga, C Grazianetti, G Congedo, M Fanciulli

Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0. 53Ga0. 47As

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 3 Pages: H220-H224

Valentin Craciun, Maryline Guilloux-Viry, Marin Alexe, Gustau Catalán Bernabé, Marco Fanciulli

Proceedings of the EMRS 2011 Spring Meeting Symposium D: Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films III Preface

Thin Solid Films [Elsevier Science], Volume: 520 Issue: 14 Pages: 4507-4507

Xavier Jehl, B Roche, Marc Sanquer, B Voisin, Romain Wacquez, Veeresh Deshpande, Bernard Previtali, Maud Vinet, J Verduijn, GC Tettamanzi, S Rogge, D Kotekar-Patil, M Ruoff, D Kern, DA Wharam, M Belli, E Prati, M Fanciulli

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

Procedia Computer Science [Elsevier], Volume: 7 Pages: 266-268

Guillaume Leti, Enrico Prati, Matteo Belli, Guido Petretto, Marco Fanciulli, Maud Vinet, Romain Wacquez, Marc Sanquer

Switching quantum transport in a three donors silicon fin-field effect transistor

Applied Physics Letters [AIP Publishing], Volume: 99 Issue: 24 Pages: 242102

C Wiemer, A Debernardi, A Lamperti, A Molle, O Salicio, L Lamagna, M Fanciulli

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

Applied Physics Letters [AIP], Volume: 99 Issue: 23 Pages: 232907

A Molle, L Lamagna, C Grazianetti, G Brammertz, C Merckling, M Caymax, S Spiga, M Fanciulli

Reconstruction dependent reactivity of As-decapped In0. 53Ga0. 47As (001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

Applied Physics Letters [AIP], Volume: 99 Issue: 19 Pages: 193505

A Zenkevich, R Mantovan, M Fanciulli, M Minnekaev, Yu Matveyev, Yu Lebedinskii, S Thiess, W Drube

Fe/BaTiO3 interface: Band alignment and chemical properties

Applied Physics Letters [AIP], Volume: 99 Issue: 18 Pages: 182905

Alessandro Molle, Silvia Baldovino, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas

Impact of post deposition annealing in the electrically active traps at the interface between Ge (001) substrates and LaGeOx films grown by molecular beam deposition

Journal of Applied Physics [AIP], Volume: 110 Issue: 8 Pages: 084504

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Alessio Lamperti, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

(Invited) Active Trap Determination at the Interface of Ge and In0. 53Ga0. 47 as Substrates with Dielectric Layers

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Alessio Lamperti, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

Active Trap Determination at the Interface of Ge and In0. 53Ga0. 47 as Substrates with Dielectric Layers

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221

Guido Petretto, Alberto Debernardi, Marco Fanciulli

Confinement effects and hyperfine structure in Se doped silicon nanowires

Nano letters [American Chemical Society], Volume: 11 Issue: 11 Pages: 4509-4514

Alessandro Molle, Luca Lamagna, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

Improved Performance of In0. 53Ga0. 47As-Based Metal–Oxide–Semiconductor Capacitors with Al: ZrO2 Gate Dielectric Grown by Atomic Layer Deposition

Applied physics express [IOP Publishing], Volume: 4 Issue: 9 Pages: 094103

C Wiemer, A Lamperti, L Lamagna, O Salicio, A Molle, M Fanciulli

Detection of the tetragonal phase in atomic layer deposited La-doped ZrO2 thin films on germanium

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 158 Issue: 8 Pages: G194-G198

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

Active Trap Determination at the Interface of Ge and InxGa1-xAs Substrates with Dielectric Layers

Meeting Abstracts [The Electrochemical Society], Issue: 27 Pages: 1899-1899

M Fanciulli, A Vellei, C Canevali, S Baldovino, Giovanni Pennelli, M Longo

Electrically detected magnetic resonance of donors and interfacial defects in silicon nanowires

Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 3 Issue: 4 Pages: 568-574

A Andreozzi, L Lamagna, G Seguini, M Fanciulli, S Schamm-Chardon, C Castro, M Perego

The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography andatomic layer deposition

Nanotechnology [IOP Publishing], Volume: 22 Issue: 33 Pages: 335303

A Andreozzi, L Lamagna, G Seguini, M Fanciulli, Sylvie Schamm-Chardon, Celia Castro, M Perego

The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition

Nanotechnology [IOP Publishing], Volume: 22 Issue: 33 Pages: 335303

A Debernardi, M Fanciulli

Ab initio study of magnetic properties of complexes formed by an Fe impurity and an intrinsic interstitial defect in ZnO

Physical Review B [American Physical Society], Volume: 84 Issue: 2 Pages: 024415

M Fanciulli, A Molle, S Baldovino, A Vellei

Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires

Microelectronic engineering [Elsevier], Volume: 88 Issue: 7 Pages: 1482-1487

M Belli, M Fanciulli, NV Abrosimov

Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin echo envelope modulation

Physical Review B [American Physical Society], Volume: 83 Issue: 23 Pages: 235204

A Lamperti, S Baldovino, A Molle, M Fanciulli

Chemical nature of the passivation layer depending on the oxidizing agent in Gd 2 O 3/GeO 2/Ge stacks grown by molecular beam deposition

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al 2 O 3 stacks on In 0.53 Ga 0.47 As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439

L Lamagna, M Fusi, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Effects of surface passivation during atomic layer deposition of Al 2 O 3 on In 0.53 Ga 0.47 As substrates

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434

Luca Lamagna, Alessandro Molle, Claudia Wiemer, Sabina Spiga, Carlo Grazianetti, Marco Fanciulli

Atomic Layer Deposition of Al-Doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates

ECS Transactions [The Electrochemical Society], Volume: 35 Issue: 3 Pages: 431-440

Claudia Wiemer, Alessio Lamperti, Luca Lamagna, Olivier Salicio, Alessandro Molle, Marco Fanciulli

Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of Atomic Layer Deposited La-Doped ZrO2 Thin Films on Ge (001)

ECS Transactions [The Electrochemical Society], Volume: 35 Issue: 3 Pages: 481-490

Damien Deleruyelle, Carine Dumas, Marion Carmona, Christophe Muller, Sabina Spiga, Marco Fanciulli

Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy

Applied physics express [IOP Publishing], Volume: 4 Issue: 5 Pages: 051101

Federico Nardi, Daniele Ielmini, Carlo Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

Solid-State Electronics [Pergamon], Volume: 58 Issue: 1 Pages: 42-47

A Lamperti, S Baldovino, A Molle, M Fanciulli

Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406

Sylvie Schamm-Chardon, Pierre-Eugène Coulon, L Lamagna, C Wiemer, S Baldovino, M Fanciulli

Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 419-422

S Baldovino, A Molle, M Fanciulli

Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100) Ge/GeO 2 interface

Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 388-390

L Lamagna, M Fusi, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Effects of surface passivation during atomic layer deposition of Al2O3 on In0. 53Ga0. 47As substrates

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al sub (2) O sub (3) stacks on In sub (0. 53) Ga sub (0. 47) As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier BV], Volume: 88 Issue: 4 Pages: 435-439

C Wiemer, S Baldovino, L Lamagna, M Perego, Sylvie Schamm-Chardon, M Fanciulli

Structural and electrical properties of Er-doped HfO 2 and of its interface with Ge (001)

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 415-418

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al2O3 stacks on In0. 53Ga0. 47As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439

DV Azamat, A Dejneka, VA Trepakov, L Jastrabik, M Fanciulli, VY Ivanov, M Godlewski, VI Sokolov, J Rosa, AG Badalyan

EPR spectroscopy of weak exchange interactions between Co2+ ions in ZnO

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 5 Issue: 4 Pages: 138-140

C Dumas, D Deleruyelle, A Demolliens, Ch Muller, S Spiga, E Cianci, M Fanciulli, I Tortorelli, R Bez

Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes

Thin Solid Films [Elsevier], Volume: 519 Issue: 11 Pages: 3798-3803

Claire Pirim, Lahouari Krim

An FTIR study on the catalytic effect of water molecules on the reaction of CO successive hydrogenation at 3K

Chemical Physics [North-Holland], Volume: 380 Issue: 1-3 Pages: 67-76

Daniele Ielmini, S Spiga, Federico Nardi, Carlo Cagli, A Lamperti, E Cianci, M Fanciulli

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

Journal of Applied Physics [AIP], Volume: 109 Issue: 3 Pages: 034506

Enrico Prati, Matteo Belli, Simone Cocco, Guido Petretto, Marco Fanciulli

Adiabatic charge control in a single donor atom transistor

Applied physics letters [AIP Publishing], Volume: 98 Issue: 5 Pages: 053109

G Congedo, S Spiga, U Russo, A Lamperti, O Salicio, E Cianci, M Fanciulli

Evaluation of DyScO x as an alternative blocking dielectric in TANOS memories with Si 3 N 4 or Si-rich SiN charge trapping layers

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 29 Issue: 1 Pages: 01AE04

A Lamperti, E Cianci, U Russo, S Spiga, O Salicio, G Congedo, M Fanciulli

Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 29 Issue: 1 Pages: 01AE03

M Longo, C Wiemer, O Salicio, M Fanciulli, L Lazzarini, E Rotunno

Au-catalyzed self assembly of GeTe nanowires by MOCVD

Journal of Crystal Growth [North-Holland], Volume: 315 Issue: 1 Pages: 152-156

Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

Improved Performance of In0. 53Ga0. 47As-Based Metal–Oxide–Semiconductor Capacitors with Al: ZrO2 Gate Dielectric Grown by Atomic Layer Deposition

Applied Physics Express [], Volume: 4 Pages: 094103

L Lamagna, C Wiemer, M Perego, SN Volkos, S Baldovino, D Tsoutsou, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, M Fanciulli

O 3-based atomic layer deposition of hexagonal La 2 O 3 films on Si (100) and Ge (100) substrates

Journal of Applied Physics [AIP], Volume: 108 Issue: 8 Pages: 084108

Haraldur Pall Gunnlaugsson, Torben Esmann Mølholt, R Mantovan, H Masenda, D Naidoo, WB Dlamini, R Sielemann, K Bharuth-Ram, Gerd Weyer, K Johnston, Guido Langouche, S Ólafsson, HP Gíslason, Y Kobayashi, Y Yoshida, M Fanciulli, ISOLDE collaboration

Paramagnetism in Mn/Fe implanted ZnO

Applied Physics Letters [AIP], Volume: 97 Issue: 14 Pages: 142501

Annalisa Del Vitto, Rossella Piagge, Enrica Ravizza, Simona Spadoni, Alessandro Sebastiani, Claudia Scozzari, Claudia Wiemer, Gabriella Ghidini, Mauro Alessandri, Marco Fanciulli, Jan Willem Maes, Mohith Verghese

Evaluation of HfLaOx as Blocking Layer for Innovative Nonvolatile Memory Applications

ECS Transactions [The Electrochemical Society], Volume: 33 Issue: 3 Pages: 417-424

Annalisa Del Vitto, Rossella Piagge, Enrica Ravizza, Simona Spadoni, Alessandro Sebastiani, Claudia Scozzari, Claudia Wiemer, Gabriella Ghidini, Mauro Alessandri, Marco Fanciulli, Jan Willem Maes, Mohith Verghese

LaHfOx Films Analyses for NVM Applications

Meeting Abstracts [The Electrochemical Society], Issue: 22 Pages: 1523-1523

H Masenda, D Naidoo, K Bharuth-Ram, Haraldur Pall Gunnlaugsson, Gerd Weyer, WB Dlamini, R Mantovan, R Sielemann, M Fanciulli, Torben Esmann Mølholt, S Ólafsson, Guido Langouche, K Johnston, Isolde Collaboration

Mössbauer study of 57 Fe in GaAs and GaP following 57 Mn+ implantation

Hyperfine Interactions [Springer Netherlands], Volume: 198 Issue: 1-3 Pages: 15-22

DV Azamat, J Debus, DR Yakovlev, V Yu Ivanov, M Godlewski, M Fanciulli, M Bayer

Photo‐EPR and magneto‐optical spectroscopy of iron centres in ZnO

physica status solidi (b) [WILEY‐VCH Verlag], Volume: 247 Issue: 6 Pages: 1517-1520

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Influence of the oxidizing species on the Ge dangling bonds at the (100) Ge/GeO 2 interface

Applied physics letters [AIP], Volume: 96 Issue: 22 Pages: 222110

Jan Siegel, D Puerto, J Solis, Francisco Javier García de Abajo, Carmen N Afonso, M Longo, C Wiemer, M Fanciulli, Paul Kühler, Mario Mosbacher, Paul Leiderer

Ultraviolet optical near-fields of microspheres imprinted in phase change films

Applied physics letters [AIP], Volume: 96 Issue: 19 Pages: 193108

A Debernardi, M Fanciulli

Stark effect of confined shallow levels in phosphorus-doped silicon nanocrystals

Physical Review B [American Physical Society], Volume: 81 Issue: 19 Pages: 195302

C Wiemer, L Lamagna, S Baldovino, M Perego, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, O Salicio, G Congedo, S Spiga, M Fanciulli

Dielectric properties of Er− doped HfO 2 (Er∼ 15%) grown by atomic layer deposition for high-κ gate stacks

Applied Physics Letters [AIP], Volume: 96 Issue: 18 Pages: 182901

Torben Esmann Mølholt, R Mantovan, Haraldur Pall Gunnlaugsson, D Naidoo, S Ólafsson, K Bharuth-Ram, M Fanciulli, K Johnston, Y Kobayashi, Guido Langouche, H Masenda, R Sielemann, Gerd Weyer, HP Gíslason

Observation of spin-lattice relaxations of dilute Fe 3+ in MgO by Mössbauer spectroscopy

Hyperfine Interactions [Springer Netherlands], Volume: 197 Issue: 1-3 Pages: 89-94

Haraldur Pall Gunnlaugsson, R Sielemann, Torben Esmann Mølholt, WB Dlamini, K Johnston, R Mantovan, H Masenda, D Naidoo, WN Sibanda, K Bharuth-Ram, M Fanciulli, HP Gíslason, Guido Langouche, S Ólafsson, Gerd Weyer, ISOLDE collaboration

Magnetism in iron implanted oxides: a status report

Hyperfine Interactions [Springer Netherlands], Volume: 197 Issue: 1-3 Pages: 43-52

Enrico Prati, Rossella Latempa, Marco Fanciulli

Microwave Effects in Silicon Low Dimensional Nanostructures

Journal of nanoscience and nanotechnology [American Scientific Publishers], Volume: 10 Issue: 4 Pages: 2650-2655

Enrico Prati, Matteo Belli, Marco Fanciulli, Giorgio Ferrari

Measuring the temperature of a mesoscopic electron system by means of single electron statistics

Applied physics letters [AIP Publishing], Volume: 96 Issue: 11 Pages: 113109

M Alessandri, A Del Vitto, R Piagge, A Sebastiani, C Scozzari, C Wiemer, L Lamagna, M Perego, G Ghidini, M Fanciulli

Rare earth-based high-k materials for non-volatile memory applications

Microelectronic Engineering [Elsevier], Volume: 87 Issue: 3 Pages: 290-293

R Mantovan, A Lamperti, M Georgieva, G Tallarida, M Fanciulli

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 43 Issue: 6 Pages: 065002

Alessandro Molle, Silvia Baldovino, Sabina Spiga, Marco Fanciulli

High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S96-S103

Alessandro Molle, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Marc Meuris

Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S123-S127

M Perego, G Seguini, C Wiemer, M Fanciulli, PE Coulon, C Bonafos

Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures

Nanotechnology [IOP Publishing], Volume: 21 Issue: 5 Pages: 055606

Alberto Debernardi, Marco Fanciulli

Ab initio study of the magnetic interaction of Co and Ni doped ZnO with intrinsic vacancies

Physica B: Condensed Matter [North-Holland], Volume: 404 Issue: 23-24 Pages: 4791-4793

Torben Esmann Mølholt, R Mantovan, Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Fanciulli, HP Gíslason, K Johnston, Y Kobayashi, Guido Langouche, H Masenda, D Naidoo, S Ólafsson, R Sielemann, Gerd Weyer

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

Physica B: Condensed Matter [North-Holland], Volume: 404 Issue: 23-24 Pages: 4820-4822

Mathieu Pierre, Romain Wacquez, Benoit Roche, Xavier Jehl, Marc Sanquer, Maud Vinet, Enrico Prati, Matteo Belli, Marco Fanciulli

Compact silicon double and triple dots realized with only two gates

Applied physics letters [AIP Publishing], Volume: 95 Issue: 24 Pages: 242107

Michele Perego, Caroline Bonafos, Marco Fanciulli

Phosphorus doping of ultra-small silicon nanocrystals

Nanotechnology [IOP Publishing], Volume: 21 Issue: 2 Pages: 025602

Enrico Prati, Rossella Latempa, Marco Fanciulli

Microwave-assisted transport in a single-donor silicon quantum dot

Physical Review B [American Physical Society], Volume: 80 Issue: 16 Pages: 165331

Sabina Spiga, Alessio Lamperti, Elena Cianci, Flavio G Volpe, Marco Fanciulli

Transition Metal Binary Oxides for ReRAM Applications

ECS Transactions [The Electrochemical Society], Volume: 25 Issue: 6 Pages: 411-425

L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, M Fanciulli

Thermally induced permittivity enhancement in La-doped ZrO 2 grown by atomic layer deposition on Ge (100)

Applied Physics Letters [AIP], Volume: 95 Issue: 12 Pages: 122902

R Mantovan, C Wiemer, A Lamperti, A Zenkevich, Yu Lebedinski, M Fanciulli

Dehydrogenation at the Fe/Lu 2 O 3 interface upon rapid thermal annealing

Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353

R Mantovan, C Wiemer, A Lamperti, A Zenkevich, Yu Lebedinski, M Fanciulli

Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing

Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353

Alessandro Molle, Guy Brammertz, Luca Lamagna, Marco Fanciulli, Marc Meuris, Sabina Spiga

Ge-based interface passivation for atomic layer deposited La-doped ZrO 2 on III-V compound (GaAs, In 0.15 Ga 0.85 As) substrates

Applied Physics Letters [AIP], Volume: 95 Issue: 2 Pages: 023507

Andrei Zenkevich, Yuri Lebedinskii, Yuri Matveyev, Sabina Spiga, Luca Lamagna, Marco Fanciulli

Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS

Microelectronic Engineering [Elsevier], Volume: 86 Issue: 7-9 Pages: 1777-1779

Luca Fumagalli, Maddalena Binda, Inma Suarez Lopez, Dario Natali, Marco Sampietro, Sandro Ferrari, Luca Lamagna, Marco Fanciulli

Multi layer structure for encapsulation of organic transistors

Organic Electronics [North-Holland], Volume: 10 Issue: 4 Pages: 692-695

G Congedo, S Spiga, L Lamagna, A Lamperti, Yu Lebedinskii, Yu Matveyev, A Zenkevich, P Chernykh, M Fanciulli

Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si (100)

Microelectronic Engineering [Elsevier], Volume: 86 Issue: 7-9 Pages: 1696-1699

K Bharuth-Ram, Haraldur Pall Gunnlaugsson, Gerd Weyer, R Mantovan, D Naidoo, R Sielemann, M Fanciulli, Guido Langouche, S Olafsson, Th Aigne, ISOLDE Collaboration

Mössbauer study of Fe in GaAs following 57Mn+ implantation

Hyperfine Interactions [Springer Netherlands], Volume: 191 Issue: 1-3 Pages: 115-120

L Lamagna, G Scarel, M Fanciulli, G Pavia

Investigation of interfacial layer development between thin Al 2 O 3 films grown using atomic layer deposition and Si (100), Ge (100), or GaAs (100)

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 27 Issue: 3 Pages: 443-448

Robert Muller, Christoph Krebs, Ludovic Goux, Dirk J Wouters, Jan Genoe, Paul Heremans, Sabina Spiga, Marco Fanciulli

Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer

IEEE Electron Device Letters [IEEE], Volume: 30 Issue: 6 Pages: 620-622

A Debernardi, M Fanciulli

Confinement effect in P doped spherical Si nanocrystals

Solid State Sciences [Elsevier Masson], Volume: 11 Issue: 5 Pages: 961-964

Roberto Fallica, Jean-Luc Battaglia, Simone Cocco, Cristiano Monguzzi, Andrew Teren, Claudia Wiemer, Enrico Varesi, Raimondo Cecchini, Andrea Gotti, Marco Fanciulli

Thermal and electrical characterization of materials for phase-change memory cells

Journal of Chemical & Engineering Data [American Chemical Society], Volume: 54 Issue: 6 Pages: 1698-1701

AV Zenkevich, Yu Yu Lebedinskii, A Yu Goikhman, VN Nevolin, PN Chernykh, VS Kulikauskas, R Mantovan, M Fanciulli

Growth and study of ultrathin insulating SiO2 and MgO layers on the ferromagnetic electrode surface

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques [SP MAIK Nauka/Interperiodica], Volume: 3 Issue: 2 Pages: 173-178

XL Li, D Tsoutsou, G Scarel, C Wiemer, SC Capelli, SN Volkos, L Lamagna, M Fanciulli

Chemical and structural properties of atomic layer deposited La 2 O 3 films capped with a thin Al 2 O 3 layer

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 27 Issue: 2 Pages: L1-L7

D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, Pierre-Eugène Coulon, M Fanciulli

Atomic layer deposition of La x Zr 1− x O 2− δ (x= 0.25) high-k dielectrics for advanced gate stacks

Applied Physics Letters [AIP], Volume: 94 Issue: 5 Pages: 053504

O Salicio, C Wiemer, M Fanciulli, W Gawelda, Jan Siegel, Carmen N Afonso, V Plausinaitiene, A Abrutis

Effect of pulsed laser irradiation on the structure of GeTe films deposited by metal organic chemical vapor deposition: A Raman spectroscopy study

Journal of Applied Physics [AIP], Volume: 105 Issue: 3 Pages: 033520

D Naidoo, Haraldur Pall Gunnlaugsson, K Bharuth-Ram, VV Naicker, Gerd Weyer, R Sielemann, R Mantovan, M Fanciulli, ISOLDE Collaboration

57 Fe Mössbauer investigations in p-type Silicon Germanium single crystals

Hyperfine Interactions [Springer Netherlands], Volume: 188 Issue: 1-3 Pages: 11-17

S Schamm, Pierre-Eugène Coulon, S Miao, S No Volkos, mL H Lu, L Lamagna, C Wiemer, D Tsoutsou, G Scarel, M Fanciulli

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3∕ Si Interfaces for Advanced Gate Stacks

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 156 Issue: 1 Pages: H1-H6

Haraldur Pall Gunnlaugsson, Gerd Weyer, R Mantovan, D Naidoo, R Sielemann, K Bharuth-Ram, M Fanciulli, K Johnston, S Olafsson, Guido Langouche

Isothermal defect annealing in semiconductors investigated by time-delayed Mössbauer spectroscopy: application to ZnO

Hyperfine Interactions [Springer Netherlands], Volume: 188 Issue: 1-3 Pages: 85-89

Alberto Debernardi, Marco Fanciulli

A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for a Silicon-Based Qubit

Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures [Springer Berlin/Heidelberg], Pages: 221-239

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, M Fanciulli

Erratum to Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing Microelectronic Engineering 85 (2008) 2411-2413

Microelectronic Engineering [], Volume: 86 Issue: 10 Pages: 2138

S Schamm, PE Coulon, S Miao, SN Volkos, LH Lu, L Lamagna, C Wiemer, D Tsoutsou, G Scarel, M Fanciulli

Semiconductor Devices, Materials, and Processing-Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks

Journal of the Electrochemical Society [], Volume: 156 Issue: 1 Pages: H1

Alessandro Molle, Guy Brammertz, Luca Lamagna, Sabina Spiga, Marc Meuris, Marco Fanciulli

Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In 0.15 Ga 0.85 As substrates

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1194

Robert Muller, Nicole Thomas, Christoph Krebs, Ludovic Goux, Dirk Wouters, Jan Genoe, Paul Heremans, Sabina Spiga, Marco Fanciulli

Resistive electrical switching of CuTCNQ based memory with a dedicated switching layer

Proceedings of the MRS Spring Meeting Symposium H: Materials and Physics for Nonvolatile Memories [],

Haraldur Pall Gunnlaugsson, Gerd Weyer, R Mantovan, D Naidoo, R Sielemann, K Bharuth-Ram, M Fanciulli, K Johnston, S Olafsson, Guido Langouche

Isothermal defect annealing in semiconductors investigated by time-delayed Mössbauer spectroscopy: application to ZnO

Hyperfine Interactions [Springer Netherlands], Volume: 188 Issue: 1 Pages: 85-89

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, S Schamm, PE Coulon, M Fanciulli

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2 O 3 films upon annealing

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2411-2413

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Evidence of dangling bond electrical activity at the Ge/oxide interface

Applied Physics Letters [AIP], Volume: 93 Issue: 24 Pages: 242105

A Lamperti, S Spiga, HL Lu, C Wiemer, M Perego, E Cianci, M Alia, M Fanciulli

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2425-2429

HL Lu, G Scarel, XL Li, M Fanciulli

Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 24 Pages: 5464-5468

S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, M Alia, FG Volpe, M Fanciulli

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, S Schamm, Pierre-Eugène Coulon, M Fanciulli

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2411-2413

M Longo, O Salicio, C Wiemer, R Fallica, A Molle, M Fanciulli, C Giesen, B Seitzinger, PK Baumann, M Heuken, S Rushworth

Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 23 Pages: 5053-5057

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd 2 O 3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240

Sylvie Schamm, Pierre-Eugène Coulon, Shu Miao, Stelios N Volkos, L H Lu, Luca Lamagna, C Wiemer, Dimitra Tsoutsou, Giovanna Scarel, Marco Fanciulli

ALD-Grown Rare Earth Oxides for Advanced Gate Stacks

ECS Transactions [The Electrochemical Society], Volume: 13 Issue: 1 Pages: 77-88

HL Lu, G Scarel, L Lamagna, M Fanciulli, Shi-Jin Ding, David Wei Zhang

Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu 2 O 3 films on Si (100)

Applied physics letters [AIP], Volume: 93 Issue: 15 Pages: 152906

HL Lu, G Scarel, C Wiemer, M Perego, S Spiga, M Fanciulli, G Pavia

Atomic layer deposition of NiO films on Si (100) using cyclopentadienyl-type compounds and ozone as precursors

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 155 Issue: 10 Pages: H807-H811

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240

M Perego, G Seguini, M Fanciulli

XPS and IPE analysis of HfO 2 band alignment with high-mobility semiconductors

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 221-225

A Debernardi, C Wiemer, M Fanciulli

Epitaxial anatase HfO 2 on high-mobility substrate for ultra-scaled CMOS devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 241-244

Alessandro Molle, Sabina Spiga, Andrea Andreozzi, Marco Fanciulli, Guy Brammertz, Marc Meuris

Structure and interface bonding of Ge O 2∕ Ge∕ In 0.15 Ga 0.85 As heterostructures

Applied Physics Letters [AIP], Volume: 93 Issue: 13 Pages: 133504

R Mantovan, A Debernardi, M Fanciulli

Size dependence of the Mössbauer recoilless fraction in β-Sn nanocrystals

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 20 Issue: 38 Pages: 385201

R Mantovan, M Georgieva, M Fanciulli, A Goikhman, N Barantcev, Yu Lebedinskii, A Zenkevich

Synthesis and characterization of Fe3Si/SiO2 structures for spintronics

physica status solidi (a) [WILEY‐VCH Verlag], Volume: 205 Issue: 8 Pages: 1753-1757

Enrico Prati, Marco Fanciulli, Giorgio Ferrari, Marco Sampietro

Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [AIP], Volume: 103 Issue: 12 Pages: 123707

HL Lu, G Scarel, M Alia, M Fanciulli, Shi-Jin Ding, David Wei Zhang

Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

Applied Physics Letters [AIP], Volume: 92 Issue: 22 Pages: 222907

Enrico Prati, Marco Fanciulli, Alessandro Calderoni, Giorgio Ferrari, Marco Sampietro

Effect of microwave irradiation on the emission and capture dynamics in silicon metal oxide semiconductor field effect transistors

Journal of Applied Physics [AIP], Volume: 103 Issue: 10 Pages: 104502

Sylvie Schamm, Pierre-Eugène Coulon, Shu Miao, Luca Lamagna, Dimitra Tsoutsou, Stelios N Volkos, Giovanna Scarel, Marco Fanciulli

ALD Grown Rare Earth Oxides for Advanced Gate Stack

Meeting Abstracts [The Electrochemical Society], Issue: 16 Pages: 626-626

Enrico Prati, Marco Fanciulli

Manipulation of localized charge states in n-MOSFETs with microwave irradiation

Physics Letters A [North-Holland], Volume: 372 Issue: 17 Pages: 3102-3104

M Perego, G Seguini, G Scarel, M Fanciulli, F Wallrapp

Energy band alignment at Ti O 2∕ Si interface with various interlayers

Journal of Applied Physics [AIP], Volume: 103 Issue: 4 Pages: 043509

M Perego, A Molle, M Fanciulli

Effect of oxygen on the electronic configuration of Gd 2 O 3∕ Ge heterojunctions

Applied Physics Letters [AIP], Volume: 92 Issue: 4 Pages: 042106

Alessandro Molle, Claudia Wiemer, MDNK Bhuiyan, Grazia Tallarida, Marco Fanciulli

Epitaxial growth of cubic Gd2O3 thin films on Ge substrates

Journal of Physics: Conference Series [IOP Publishing], Volume: 100 Issue: 4 Pages: 042048

A Debernardi, M Fanciulli

The magnetic interaction of Fe doped ZnO with intrinsic defects: a first principles study

Physica B: Condensed Matter [North-Holland], Volume: 401 Pages: 451-453

DV Azamat, M Fanciulli

The structure of charge-compensated Fe 3+ ions in ZnO

Physica B: Condensed Matter [North-Holland], Volume: 401 Pages: 382-385

Enrico Prati, Marco Fanciulli, Alessandro Calderoni, Giorgio Ferrari, Marco Sampietro

Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation

arXiv preprint arXiv:0712.1638 [],

R Mantovan, M Georgieva, M Perego, HL Lu, S Cocco, A Zenkevich, G Scarel, M Fanciulli

Atomic layer deposition of magnetic thin films

ACTA PHYSICA POLONICA SERIES A [POLISH ACADEMY OF SCIENCES WARSAW], Volume: 112 Issue: 6 Pages: 1271

Gerd Weyer, Haraldur Pall Gunnlaugsson, R Mantovan, M Fanciulli, D Naidoo, K Bharuth-Ram, T Agne

Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO

Journal of Applied Physics [AIP], Volume: 102 Issue: 11 Pages: 113915

G Seguini, M Perego, S Spiga, M Fanciulli, A Dimoulas

Conduction band offset of Hf O 2 on GaAs

Applied Physics Letters [AIP], Volume: 91 Issue: 19 Pages: 192902

Enrico Prati, Marco Fanciulli, Alessandro Calderoni, Giorgio Ferrari, Marco Sampietro

Microwave irradiation effects on random telegraph signal in a MOSFET

Physics Letters A [North-Holland], Volume: 370 Issue: 5-6 Pages: 491-493

S Baldovino, S Spiga, G Scarel, M Fanciulli

Effects of the oxygen precursor on the interface between (100) Si and Hf O 2 films grown by atomic layer deposition

Applied Physics Letters [AIP], Volume: 91 Issue: 17 Pages: 172905

Alberto Debernardi, Claudia Wiemer, Marco Fanciulli

Epitaxial phase of hafnium dioxide for ultrascaled electronics

Physical Review B [American Physical Society], Volume: 76 Issue: 15 Pages: 155405

G Scarel, C Wiemer, M Fanciulli, IL Fedushkin, GK Fukin, GA Domrachev, Y Lebedinskii, A Zenkevich, G Pavia

[(Me3Si) 2N] 3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films

Zeitschrift für anorganische und allgemeine Chemie [WILEY‐VCH Verlag], Volume: 633 Issue: 11‐12 Pages: 2097-2103

V Cosnier, P Besson, V Loup, L Vandroux, S Minoret, M Cassé, X Garros, JM Pedini, S Lhostis, K Dabertrand, C Morin, C Wiemer, M Perego, M Fanciulli

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques

Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 1886-1889

V Ioannou-Sougleridis, P Dimitrakis, V Em Vamvakas, P Normand, Caroline Bonafos, S Schamm, Nikolay Cherkashin, G Ben Assayag, M Perego, M Fanciulli

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 1986-1989

A Zenkevich, Yu Lebedinskii, S Spiga, C Wiemer, G Scarel, M Fanciulli

Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si

Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 2263-2266

Italy G. Scarel,a A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli MDM National Laboratory, CNR-INFM, Agrate Brianza, Milan 20041

Vibrational and electrical properties of hexagonal La 2 O 3 films

APPLIED PHYSICS LETTERS [American Institute of Physics], Volume: 91 Issue: 102901

Alessandro Molle, Michele Perego, Md Nurul Kabir Bhuiyan, Claudia Wiemer, Grazia Tallarida, Marco Fanciulli

The interface between Gd 2 O 3 films and Ge (001): A comparative study between molecular and atomic oxygen mediated growths

Journal of Applied Physics [AIP], Volume: 102 Issue: 3 Pages: 034513

V Ioannou-Sougleridis, P Dimitrakis, V Em Vamvakas, P Normand, Caroline Bonafos, S Schamm, Nikolay Cherkashin, Gérard Ben Assayag, M Perego, M Fanciulli

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Applied physics letters [AIP], Volume: 90 Issue: 26 Pages: 263513

Roberto Mantovan, Marco Fanciulli

Development of a parallel-plate avalanche counter to perform conversion electron Mössbauer spectroscopy at low temperatures

Review of scientific instruments [AIP], Volume: 78 Issue: 6 Pages: 063902

A Dimoulas, DP Brunco, S Ferrari, Jin Won Seo, Y Panayiotatos, A Sotiropoulos, T Conard, M Caymax, S Spiga, M Fanciulli, Ch Dieker, EK Evangelou, S Galata, Michel Houssa, MM Heyns

Interface engineering for Ge metal-oxide–semiconductor devices

Thin Solid Films [Elsevier], Volume: 515 Issue: 16 Pages: 6337-6343

A Debernardi, M Fanciulli

Ab initio study of magnetic interaction of Fe doped ZnO with intrinsic vacancies

Applied physics letters [AIP], Volume: 90 Issue: 21 Pages: 212510

J-L Battaglia, C Wiemer, M Fanciulli

An accurate low-frequency model for the 3 ω method

Journal of applied physics [AIP], Volume: 101 Issue: 10 Pages: 104510

Alessandro Molle, Claudia Wiemer, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli, Giuseppe Pavia

Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd 2 O 3 films on Ge (001) substrates

Applied physics letters [AIP], Volume: 90 Issue: 19 Pages: 193511

M Perego, G Scarel, M Fanciulli, IL Fedushkin, AA Skatova

Fabrication of Ge O 2 layers using a divalent Ge precursor

Applied physics letters [AIP], Volume: 90 Issue: 16 Pages: 162115

A Zenkevich, Yu Lebedinskii, G Scarel, Marco Fanciulli, A Baturin, N Lubovin

Degradation kinetics of ultrathin HfO 2 layers on Si (100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM

Microelectronics Reliability [Pergamon], Volume: 47 Issue: 4-5 Pages: 657-659

M Malvestuto, M Pedio, S Nannarone, G Pavia, G Scarel, M Fanciulli, F Boscherini

A study of the growth of Lu 2 O 3 on Si (001) by synchrotron radiation photoemission and transmission electron microscopy

Journal of applied physics [AIP], Volume: 101 Issue: 7 Pages: 074104

RS Brusa, C Macchi, S Mariazzi, GP Karwasz, G Scarel, M Fanciulli

Innovative dielectrics for semiconductor technology

Radiation Physics and Chemistry [Pergamon], Volume: 76 Issue: 2 Pages: 189-194

Daniel Mathiot, Michele Perego, Marco Fanciulli, Gérard Ben Assayag

Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO 2

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 254 Issue: 1 Pages: 139-142

A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, A Sotiropoulos, T Conard, M Caymax, S Spiga, M Fanciulli

Ch. Dieker, EK Evangelou, S. Galata, M. Houssa, and MM Heyns

Thin Solid Films [], Volume: 515 Pages: 6337

Matty Caymax, Sven Van Elshocht, Michel Houssa, Annelies Delabie, Thierry Conard, Marc Meuris, MM Heyns, A Dimoulas, S Spiga, M Fanciulli, Jin Won Seo, LV Goncharova

HfO 2 as gate dielectric on Ge: Interfaces and deposition techniques

Materials Science and Engineering: B [Elsevier], Volume: 135 Issue: 3 Pages: 256-260

A Debernardi, M Fanciulli

Structural and vibrational properties of high-dielectric oxides, HfO 2 and TiO 2: A comparative study

Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 6 Pages: 1014-1019

G Scarel, C Wiemer, G Tallarida, S Spiga, G Seguini, E Bonera, M Fanciulli, Y Lebedinskii, A Zenkevich, G Pavia, IL Fedushkin, GK Fukin, GA Domrachev

Atomic layer deposition of Lu silicate films using [(Me3Si) 2N] 3Lu

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 153 Issue: 11 Pages: F271-F276

M Perego, G Seguini, M Fanciulli

Energy band alignment of HfO 2 on Ge

Journal of applied physics [AIP], Volume: 100 Issue: 9 Pages: 093718

Claudia Dallera, Francesca Fracassi, Lucio Braicovich, Giovanna Scarel, Claudia Wiemer, Marco Fanciulli, Giuseppe Pavia, Bruce CC Cowie

Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices

Applied physics letters [AIP], Volume: 89 Issue: 18 Pages: 183521

M Fanciulli, E Bonera, S Nokhrin, G Pacchioni

Phosphorous–oxygen hole centers in phosphosilicate glass films

Physical Review B [American Physical Society], Volume: 74 Issue: 13 Pages: 134102

Christian Monzio Compagnoni, Alessandro S Spinelli, Andrea Bianchini, Andrea L Lacaita, Sabina Spiga, Marco Fanciulli

Characterization of transient currents in HfO 2 capacitors in the short timescale

Microelectronic engineering [Elsevier], Volume: 83 Issue: 10 Pages: 1927-1930

S Ferrari, S Spiga, C Wiemer, M Fanciulli, A Dimoulas

Germanium diffusion during Hf O 2 growth on Ge by molecular beam epitaxy

Applied physics letters [AIP], Volume: 89 Issue: 12 Pages: 122906

Christian Monzio Compagnoni, Alessandro S Spinelli, Andrea Bianchini, Andrea L Lacaita, Sabina Spiga, Giovanna Scarel, Claudia Wiemer, Marco Fanciulli

Temperature dependence of transient and steady-state gate currents in Hf O 2 capacitors

Applied physics letters [AIP], Volume: 89 Issue: 10 Pages: 103504

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

In situ chemical and structural investigations of the oxidation of Ge (001) substrates by atomic oxygen

Applied physics letters [AIP], Volume: 89 Issue: 8 Pages: 083504

SD Elliott, G Scarel, C Wiemer, M Fanciulli, G Pavia

Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism

Chemistry of materials [American Chemical Society], Volume: 18 Issue: 16 Pages: 3764-3773

S Ferrari, M Fanciulli

Diffusion reaction of oxygen in HfO2/SiO2/Si stacks

The Journal of Physical Chemistry B [American Chemical Society], Volume: 110 Issue: 30 Pages: 14905-14910

Emiliano Bonera, Marco Fanciulli, Gianpietro Carnevale

Raman stress maps from finite-element models of silicon structures

Journal of applied physics [AIP], Volume: 100 Issue: 3 Pages: 033516

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

Formation and stability of germanium oxide induced by atomic oxygen exposure

Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 4-5 Pages: 673-678

M Perego, S Ferrari, M Fanciulli

Comparative study of negative cluster emission in sputtering of Si, Ge and their oxides

Applied surface science [North-Holland], Volume: 252 Issue: 19 Pages: 7236-7238

Enrico Prati, Marco Fanciulli, Giorgio Ferrari, Marco Sampietro

Effect of the triplet state on the random telegraph signal in Si n-MOSFETs

Physical Review B [American Physical Society], Volume: 74 Issue: 3 Pages: 033309

A Debernardi, Alfonso Baldereschi, M Fanciulli

Computation of the Stark effect in P impurity states in silicon

Physical Review B [American Physical Society], Volume: 74 Issue: 3 Pages: 035202

Mauro Alessandri, Rossella Piagge, Stefano Alberici, Enrico Bellandi, Massimo Caniatti, Gabriella Ghidini, Alberto Modelli, Giuseppe Pavia, Enrica Ravizza, Alessandro Sebastiani, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, Vincenzo Fiorentini, Emiliano Cadelano, Giorgia Maria Lopez

High-k materials in flash memories

ECS Transactions [The Electrochemical Society], Volume: 1 Issue: 5 Pages: 91-105

M Perego, M Fanciulli, Caroline Bonafos, Nikolay Cherkashin

Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO 2 thin films

Materials Science and Engineering: C [Elsevier], Volume: 26 Issue: 5-7 Pages: 835-839

AV Zenkevich, YY Lebedinskii, NS Barantsev, VN Nevolin, VS Kulikauskas, G Scarel, M Fanciulli

Degradation pattern of thin HfO2 films on Si (100) under ultrahigh-vacuum annealing: An investigation by x-ray photoelectron spectroscopy and low-energy ion scattering

Russian Microelectronics [Nauka/Interperiodica], Volume: 35 Issue: 4 Pages: 210-215

M Malvestuto, G Scarel, C Wiemer, M Fanciulli, F d’Acapito, F Boscherini

X-ray absorption spectroscopy study of Yb 2 O 3 and Lu 2 O 3 thin films deposited on Si (100) by atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 246 Issue: 1 Pages: 90-95

G Seguini, S Spiga, E Bonera, M Fanciulli, A Reyes Huamantinco, CJ Först, CR Ashman, PE Blöchl, A Dimoulas, G Mavrou

Band alignment at the La 2 Hf 2 O 7∕(001) Si interface

Applied physics letters [AIP], Volume: 88 Issue: 20 Pages: 202903

G Seguini, S Spiga, E Bonera, M Fanciulli, A Reyes Huamantinco, CJ Foerst, CR Ashman, PE Bloechl, A Dimoulas, G Mavrou

Band alignment at the La {sub 2} Hf {sub 2} O {sub 7}/(001) Si interface

Applied Physics Letters [], Volume: 88 Issue: 20

M Malvestuto, G Scarel, C Wiemer, M Fanciulli, F d’Acapito, F Boscherini

X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si (1 0 0) by atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 246 Issue: 1 Pages: 90-95

Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Dietrich, M Fanciulli, Hans Otto Uldall Fynbo, G Weyer

Identification of substitutional and interstitial Fe in 6H-SiC

Hyperfine interactions [Kluwer Academic Publishers], Volume: 169 Issue: 1-3 Pages: 1319-1323

M Perego, G Seguini, G Scarel, M Fanciulli

X‐ray photoelectron spectroscopy study of energy‐band alignments of Lu2O3 on Ge

Surface and Interface Analysis: An International Journal devoted to the development and application of techniques for the analysis of surfaces, interfaces and thin films [John Wiley & Sons, Ltd.], Volume: 38 Issue: 4 Pages: 494-497

Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Dietrich, M Fanciulli, Hans Otto Uldall Fynbo, G Weyer

Identification of substitutional and interstitial Fe in 6H-SiC

Hyperfine interactions [Kluwer Academic Publishers], Volume: 169 Issue: 1-3 Pages: 1319-1323

GIOVANNA SCAREL, MARCO FANCIULLI

ANDREI ZENKEVICH AND YURI LEBEDINSKII Moscow Engineering Physics Institute-State university 115409 Moscow, Russian Federation

Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices [Springer Science & Business Media], Pages: 147

A Claverie, C Bonafos, GB Assayag, S Schamm, N Cherkashin, V Paillard, P Dimitrakis, E Kapetenakis, D Tsoukalas, T Muller, B Schmidt, KH Heinig, M Perego, M Fanciulli, D Mathiot, M Carrada, P Normand

Special Session III-Electronic Materials-Materials Science Issues for the Fabrication of Nanocrystal Memory Devices by Ultra Low Energy Ion Implantation

Defect and Diffusion Forum [], Volume: 258 Pages: 531

M Perego, S Ferrari, M Fanciulli

Negative cluster emission in sputtering of Si 1− x Ge x alloys: a full spectrum approach

Surface science [North-Holland], Volume: 599 Issue: 1-3 Pages: 141-149

D Skarlatos, C Tsamis, M Perego, M Fanciulli, D Tsoukalas

Interstitial injection during oxidation of very low energy nitrogen-implanted silicon

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 314-318

Anna Ferretti, Marco Fanciulli, Alessandro Ponti, Arthur Schweiger

Electron spin-echo relaxation and envelope modulation of shallow phosphorus donors in silicon

Physical Review B [American Physical Society], Volume: 72 Issue: 23 Pages: 235201

Marco Fanciulli, Enrico Prati, Giorgio Ferrari, Marco Sampietro

Random Telegraph Signal In Si n‐MOSFETs: A Way Towards Single Spin Resonance Detection

AIP Conference Proceedings [AIP], Volume: 800 Issue: 1 Pages: 125-130

Anna Ferretti, Marco Fanciulli, Alessandro Ponti, Arthur Schweiger

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

arXiv preprint cond-mat/0510497 [],

Emiliano Bonera, Marco Fanciulli, Marcello Mariani

Raman spectroscopy of strain in subwavelength microelectronic devices

Applied Physics Letters [AIP], Volume: 87 Issue: 11 Pages: 111913

S Spiga, C Wiemer, G Tallarida, G Scarel, S Ferrari, G Seguini, M Fanciulli

Effects of the oxygen precursor on the electrical and structural properties of Hf O 2 films grown by atomic layer deposition on Ge

Applied Physics Letters [AIP], Volume: 87 Issue: 11 Pages: 112904

Enrico Prati, Marco Fanciulli, Giorgio Ferrari, Marco Sampietro

High Magnetic Field Dependence of Capture/Emission Fluctuations of a Single Defect in Silicon MOSFETs

AIP Conference Proceedings [AIP], Volume: 780 Issue: 1 Pages: 221-224

Enrico Prati, Marco Fanciulli, Giorgio Ferrari, Marco Sampietro, Paolo Fantini

Microwave Induced Effects on the Random Telegraph Signal in a MOSFET

AIP Conference Proceedings [AIP], Volume: 780 Issue: 1 Pages: 171-174

Giorgio Ferrari, Laura Fumagalli, Marco Sampietro, Enrico Prati, Marco Fanciulli

dc modulation in field-effect transistors operating under microwave irradiation for quantum readout

Journal of applied physics [AIP], Volume: 98 Issue: 4 Pages: 044505

Giorgio Ferrari, Laura Fumagalli, Marco Sampietro, Enrico Prati, Marco Fanciulli

CMOS fully compatible microwave detector based on MOSFET operating in resistive regime

IEEE microwave and wireless components letters [IEEE], Volume: 15 Issue: 7 Pages: 445-447

D Skarlatos, C Tsamis, M Perego, M Fanciulli

Oxidation-enhanced diffusion of boron in very low-energy N 2+-implanted silicon

Journal of applied physics [AIP], Volume: 97 Issue: 11 Pages: 113534

S Kremmer, H Wurmbauer, C Teichert, G Tallarida, S Spiga, C Wiemer, M Fanciulli

Nanoscale morphological and electrical homogeneity of HfO 2 and ZrO 2 thin films studied by conducting atomic-force microscopy

Journal of applied physics [AIP], Volume: 97 Issue: 7 Pages: 074315

Nikolay Cherkashin, Caroline Bonafos, H Coffin, Marzia Carrada, S Schamm, Gérard Ben Assayag, D Chassaing, P Dimitrakis, P Normand, M Perego, M Fanciulli, T Muller, KH Heinig, Alain Claverie

Fabrication of nanocrystal memories by ultra low energy ion implantation

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 2 Issue: 6 Pages: 1907-1911

M Malvestuto, R Carboni, F Boscherini, F d’Acapito, S Spiga, M Fanciulli, A Dimoulas, G Vellianitis, G Mavrou

X-ray absorption study of the growth of Y 2 O 3 on Si (001)

Physical Review B [American Physical Society], Volume: 71 Issue: 7 Pages: 075318

M Malvestuto, R Carboni, F Boscherini, F D'Acapito, S Spiga, M Fanciulli, A Dimoulas, G Vellianitis, G Mavrou

X-ray absorption study of the growth of Y {sub 2} O {sub 3} on Si (001)

Physical Review. B, Condensed Matter and Materials Physics [], Volume: 71 Issue: 7

Emiliano Bonera, Giovanna Scarel, Marco Fanciulli, Pietro Delugas, Vincenzo Fiorentini

Dielectric Properties of High-κ Oxides: Theory and Experiment for L u 2 O 3

Physical review letters [American Physical Society], Volume: 94 Issue: 2 Pages: 027602

Enrico Prati, Marco Fanciulli, Alexey Kovalev, Joshua D Caldwell, Clifford R Bowers, Flavio Capotondi, Giorgio Biasiol, Lucia Sorba

Magnetoresistively detected electron spin resonance in low-density two-dimensional electron gas in GaAs-AlGaAs single quantum wells

IEEE transactions on nanotechnology [IEEE], Volume: 4 Issue: 1 Pages: 100-105

E Bonera, G Scarel, M Fanciulli, P Delugas, V Fiorentini

Dielectric properties of high-kappa oxides: Theory and experiment for Lu2O3

Physical Review Letters [APS], Volume: 94 Issue: 2 Pages: 027602

Marco Fanciulli, Matteo Belli, Rogério de Sousa

Vibrational modes at the Si/SiO2 interface detected by pulse electron spin resonance

APS Meeting Abstracts [],

Elena Ferraro, Marco Fanciulli, Marco De Michielis

Non-Ideal X-Gate and Z-Gate in Semiconducting Spin Qubit Implementations

Multidisciplinary Digital Publishing Institute Proceedings [], Volume: 12 Issue: 1 Pages: 53

Marco De Michielis, Elena Ferraro, Marco Fanciulli

Coherence Time of a Semiconductor Hybrid Qubit in Presence of Environmental Noises

APS Meeting Abstracts [],

Elena Ferraro, Marco Fanciulli, Marco De Michielis

CNOT sequences for heterogeneous spin qubit architectures in a noisy environment

APS Meeting Abstracts [],

E Vitiello, A Giorgioni, S Paleari, S Cecchi, E Grilli, G Isella, W Jantsch, M Fanciulli, F Pezzoli

Long-lived conduction electron spins in Ge quantum wells

International Conference on Silicon Epitaxy and Heterostructures-ICSI-10 [],

Marco Fanciulli

Ab initio Modeling and TCAD

PRiME 2016/230th ECS Meeting (October 2-7, 2016) [Ecs],

Marco Fanciulli

(Invited) Defects in Silicon and Germanium Nanowires

PRiME 2016/230th ECS Meeting (October 2-7, 2016) [Ecs],

E Covi, S Brivio, Alex Serb, T Prodromakis, M Fanciulli, S Spiga

HfO2-based memristors for neuromorphic applications

2016 IEEE International Symposium on Circuits and Systems (ISCAS) [IEEE], Pages: 393-396

Stefano Paleari, Anna Giorgioni, Stefano Cecchi, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Fabio Pezzoli, Marco Fanciulli

Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells

X EFEPR Conference Torino 2016 [],

Marco Fanciulli, Matteo Belli, Stefano Paleari, Antonio Pizio

Electron spin resonance and relaxation of defects and donors in Silicon Nanowires

APS March Meeting Abstracts [],

S Brivio, E Covi, A Serb, T Prodromakis, M Fanciulli, S Spiga

Gradual set dynamics in HfO 2-based memristor driven by sub-threshold voltage pulses

2015 International Conference on Memristive Systems (MEMRISYS) [IEEE], Pages: 1-2

Marco Fanciulli

Gate Metal

228th ECS Meeting (October 11-15, 2015) [Ecs],

M Longo, S Cecchi, S Selmo, M Fanciulli, C Wiemer, J-L Battaglia, A Saci, A Kusiak

MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires

2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154

M Longo, S Cecchi, S Selmo, M Fanciulli, C Wiemer, J-L Battaglia, A Saci, A Kusiak

MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires

2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154

Alessandro Molle, Davide Rotta, Stefano Paleari, Eugenio Cinquanta, Marco Fanciulli

Admittance spectroscopy of interface traps in MoS2 nanosheet capacitors

APS March Meeting Abstracts [],

A Giorgioni, S Paleari, S Cecchi, E Grilli, G Isella, W Jantsch, M Fanciulli, F Pezzoli

Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells

Spin Physics, Spin Chemistry, and Spin Technology [],

S Paleari, A Molle, A Lamperti, M Fanciulli

Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface

E-MRS spring meeting [],

Alberto Debernardi, Guido Petretto, Marco Fanciulli

Donor Wave Functions Delocalization in Silicon Nanowires

APS Meeting Abstracts [],

Eugenio Cinquanta, Francesco Scotognella, Daniele Chiappe, Carlo Grazianetti, Emilio Scalise, Michel Houssa, Marco Fanciulli, Caterina Vozzi, Alessandro Molle

Optical investigation of epitaxial silicene on Ag (111)

APS Meeting Abstracts [],

Marco De Michielis, Elena Ferraro, Davide Rotta, Giovanni Mazzeo, Marco Tagliaferri, Alessandro Crippa, Marco Fanciulli, Enrico Prati

Universal Set of Quantum Gates for Double-Dot Exchange-Only Spin Qubits Under Realistic Conditions

APS Meeting Abstracts [],

Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle

Raman spectrum of epitaxial silicene

2013 MRS Spring Meeting, Date: 2013/04/01-2013/04/05, Location: San Francisco [Materials Research Society],

Marco Fanciulli, Matteo Belli, Antonio Vellei, Carmen Canevali, Davide Rotta, Stefano Paleari, Martina Basini

Magnetic resonance characterization of silicon nanowires

APS Meeting Abstracts [], Volume: 1 Pages: 24003

Marco Fanciulli, Silvia Baldovino, Alessandro Molle

Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

APS March Meeting Abstracts [],

E Prati, G Petretto, M Belli, G Mazzeo, S Cocco, M De Michielis, M Fanciulli, F Guagliardo, M Vinet, R Wacquez

Spin blockade in a triple silicon quantum dot in CMOS technology

APS Meeting Abstracts [], Volume: 1 Pages: 14010

Alberto Debernardi, Guido Petretto, Andrea Masse, Marco Fanciulli

Ab initio study of confinement effects and hyperfine structure in chalcogen doped Silicon nanostructures

APS Meeting Abstracts [],

F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters

Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells

2010 IEEE International Memory Workshop [IEEE], Pages: 1-4

Torben Esmann Mølholt, R Mantovan, Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Fanciulli, K Johnston, Y Kobayashi, G Langouche, H Masenda, D Naidoo, S Ólafsson, R Sielemann, Axel Svane, Gerd Weyer

Lattice Location and Diffusion of Interstitial Fe in MgO

3rd HFI/NQI 2010 [],

Federico Nardi, Daniele Ielmini, Carlo Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters

Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells

2010 IEEE International Memory Workshop [], Pages: 66-69

R Mantovan, Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Fanciulli, K Johnston, G Langouche, D Naidoo, S Ólafsson, R Sielemann, Gerd Weyer

Observation of long lived Fe 3+ paramagnetic states in ZnO following the implantation with non-3d elements

3rd HFI/NQI 2010 [],

A Demolliens, Ch Muller, D Deleruyelle, S Spiga, E Cianci, M Fanciulli, Federico Nardi, Carlo Cagli, Daniele Ielmini

Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode

2009 IEEE International Memory Workshop [IEEE], Pages: 1-3

M Pierre, X Jehl, R Wacquez, M Vinet, M Sanquer, M Belli, E Prati, M Fanciulli, J Verduijn, GC Tettamanzi, GP Lansbergen, S Rogge, M Ruoff, M Fleischer, D Wharam, D Kern

Sample variability and time stability in scaled silicon nanowires

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on [IEEE], Pages: 249-252

Walter M Weber, Lutz Geelhaar, Luca Lamagna, Marco Fanciulli, Franz Kreupl, Eugen Unger, Henning Riechert, Giuseppe Scarpa, Paolo Lugli

Tuning the polarity of Si-nanowire transistors without the use of doping

2008 8th IEEE Conference on Nanotechnology [IEEE], Pages: 580-581

U Russo, Daniele Ielmini, Carlo Cagli, ANDREA LEONARDO Lacaita, Silvia Spiga, C Wiemer, M Perego, M Fanciulli

Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM

2007 IEEE International Electron Devices Meeting [IEEE], Pages: 775-778

C Monzio Compagnoni, AS Spinelli, A Bianchini, ANDREA LEONARDO Lacaita, S Spiga, M Fanciulli

Transient currents in HfO2 and their impact on circuit and memory applications

2006 IEEE International Reliability Physics Symposium Proceedings [IEEE], Pages: 651-652

A Claverie, Caroline Bonafos, G Ben Assayag, S Schamm, Nikolay Cherkashin, Vincent Paillard, P Dimitrakis, E Kapetenakis, Dimitris Tsoukalas, T Muller, Bernd Schmidt, KH Heinig, M Perego, Marco Fanciulli, D Mathiot, Marzia Carrada, P Normand

Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation

Defect and Diffusion Forum [Trans Tech Publications], Volume: 258 Pages: 531-541

Marco Fanciulli, Michele Perego, Caroline Bonafos, Anas Mouti, Sylvie Schamm, Gerard Benassayag

Nanocrystals in high-k dielectric stacks for non-volatile memory applications

Advances in Science and Technology [Trans Tech Publications], Volume: 51 Pages: 156-166

Giorgio Ferrari, Enrico Prati, Laura Fumagalli, Marco Sampietro, Marco Fanciulli

Microwave power detector based on a single MOSFET in standard technology

2005 European Microwave Conference [IEEE], Volume: 2 Pages: 4 pp.-1210

E Prati, M Fanciulli, Enzo DALLE MESE

METAMATERIALI CON PASSO RETICOLARE CONFRONTABILE CON LA LUNGHEZZA

II° SIMPOSIO SULLE TECNOLOGIE AVANZATE [], Pages: 105-110

E Cinquanta, SD Conte, D Chiappe, C Grazianetti, M Fanciulli, A Molle, G Cerullo, Salvatore Stagira, Francesco Scotognella, C Vozzi

Ultrafast dynamics in epitaxial silicene on Ag (111)

Ultrafast Phenomena XIX [Springer, Cham], Pages: 329-332

Marco Fanciulli

Electron spin resonance and related phenomena in low-dimensional structures

[Springer Science & Business Media], Volume: 115

R Mantovan, C Wiemer, A Lamperti, M Georgieva, M Fanciulli, A Goikhman, N Barantsev, Yu Lebedinskii, A Zenkevich

Mössbauer spectroscopy study of interfaces for spintronics

ISIAME 2008 [Springer, Berlin, Heidelberg], Pages: 371-376

Alberto Debernardi, Marco Fanciulli

A Robust and Fast Method toáComputeáShallowáStates withoutáAdjustableáParameters: SimulationsáforáaáSilicon-BasedáQubit

Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures [Springer, Berlin, Heidelberg], Pages: 221-239

Enrico Prati, Rossella Latempa, Marco Fanciulli

Photon-Assisted Tunneling in Quantum Dots

Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures [Springer, Berlin, Heidelberg], Pages: 241-258

D Naidoo, HP Gunnlaugsson, K Bharuth-Ram, VV Naicker, G Weyer, R Sielemann, R Mantovan, M Fanciulli, ISOLDE Collaboration

57Fe Mössbauer investigations in p-type Silicon Germanium single crystals

ICAME 2007 [Springer Berlin Heidelberg], Pages: 1245-1251

Sylvie Schamm, Giovanna Scarel, Marco Fanciulli

Local structure, composition and electronic properties of rare earth oxide thin films studied using advanced transmission electron microscopy techniques (TEM-EELS)

Rare earth oxide thin films [Springer, Berlin, Heidelberg], Pages: 153-177

Gabriele Seguini, Michele Perego, Marco Fanciulli

Experimental determination of the band offset of rare earth oxides on various semiconductors

Rare Earth Oxide Thin Films [Springer, Berlin, Heidelberg], Pages: 269-283

Sabina Spiga, Claudia Wiemer, Giovanna Scarel, Omar Costa, Marco Fanciulli

Electrical characterization of rare earth oxides grown by atomic layer deposition

Rare Earth Oxide Thin Films [Springer, Berlin, Heidelberg], Pages: 203-223

Giovanna Scarel, Axel Svane, Marco Fanciulli

Scientific and technological issues related to rare earth oxides: An introduction

Rare Earth oxide thin films [Springer, Berlin, Heidelberg], Pages: 1-14

S Spiga, C Wiemer, G Scarel, G Seguini, M Fanciulli, A Zenkevich, Yu Lebedinskii

Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs

Advanced Gate Stacks for High-Mobility Semiconductors [Springer, Berlin, Heidelberg], Pages: 181-209

ANDREI ZENKEVICH, YURI LEBEDINSKII, GIOVANNA SCAREL, MARCO FANCIULLI

XPS/LEIS study of high-k rare earth (Lu, Yb) oxides and silicates on Si: the effect of annealing on microstructure evolution

Defects in High-k Gate Dielectric Stacks [Springer, Dordrecht], Pages: 147-160

R Mantovan, S Spiga, M Fanciulli

Low temperature CEMS of Sn-implanted SiO2

ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 69-73

R Mantovan, S Spiga, M Fanciulli

Low temperature CEMS of Sn-implanted SiO 2

ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 69-73

Yuri Lebedinskii, Andrei Zenkevich, Giovanna Scarel, Marco Fanciulli

Film and Interface Layer Compositionof Rare Earth (Lu, Yb) Oxides Depositedby ALD

Rare Earth Oxide Thin Films [Springer, Berlin, Heidelberg], Pages: 127-142

R Mantovan, C Wiemer, A Zenkevich, M Fanciulli

CEMS characterisation of Fe/high-κ oxide interfaces

ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 1349-1353

MARCO FANCIULLI, OMAR COSTA, SILVIA BALDOVINO, SIMONE COCCO, GABRIELE SEGUINI, ENRICO PRATI, GIOVANNA SCAREL

DEFECTS AT THE HIGH-κ/SEMICONDUCTOR INTERFACES INVESTIGATED BY SPIN DEPENDENT SPECTROSCOPIES

Defects in High-k Gate Dielectric Stacks [Springer, Dordrecht], Pages: 263-276

Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Dietrich, M Fanciulli, Hans Otto Uldall Fynbo, G Weyer

Formation of Fe i− B pairs in silicon at high temperatures

ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 1315-1318

G Tallarida, S Spiga, M Fanciulli

Scanning Capacitance Force Microscopy and Kelvin Probe Force Microscopy of Nanostructures Embedded in SiO2

Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials [Springer, Dordrecht], Pages: 405-411

G Scarel, M Fanciulli

Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices

Materials for Information Technology [Springer, London], Pages: 31-38

E Bonera, M Fanciulli

Resonant Raman microscopy of stress in silicon-based microelectronics

Microscopy of Semiconducting Materials [Springer, Berlin, Heidelberg], Pages: 371-374