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My present activity deals with the development of resistance switching devices (RRAM, memristive devices) for non-volatile or allternative computing architectures. My work ranges from the optimization of the memristive device structure through material analysis and devices testing, modeling and l simulation, design of synaptic units for future integration together with artificial neurons in neuromorphic architectures.
The activity is currently funded by the European projects Real neuron-nanoelectronic Architecture with Memristive Plasticity (RAMP, FET-FP7) and Neural computing architectures in advanced monolithic 3D-VLSI nano-technologies (NEURAM3, ICT-Horizon 2020, please listen to our interview on Radio24).
Scientific Production
Fabrication of ordered Sb-Te and In-Ge-Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-9
Valence change ReRAMs (VCM)-Experiments and modelling: general discussion
Faraday discussions [The Royal Society of Chemistry], Volume: 213 Pages: 259-286
Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion
Faraday discussions [The Royal Society of Chemistry], Volume: 213 Pages: 115-150
Synaptic and neuromorphic functions: general discussion
Faraday discussions [The Royal Society of Chemistry], Volume: 213 Pages: 553-578
Faraday Discuss [], Volume: 213 Pages: 595-597
Nanotechnology [IOP Publishing], Volume: 30 Issue: 1 Pages: 015102
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 51 Issue: 34 Pages: 344003
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing
Scientific reports [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-12
Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion
Faraday Discussions [Royal Society of Chemistry],
Synaptic and neuromorphic functions: general discussion
Faraday Discussions [Royal Society of Chemistry],
Journal of Electroceramics [Springer US], Volume: 39 Issue: 1-4 Pages: 21-38
Stochastic circuit breaker network model for bipolar resistance switching memories
Journal of Computational Electronics [Springer US], Volume: 16 Issue: 4 Pages: 1154-1166
Role of Al doping in the filament disruption in HfO 2 resistance switches.
Nanotechnology [IOP Publishing], Volume: 28 Issue: 39 Pages: 395202
Analog HfO2-RRAM Switches for Neural Networks
ECS Transactions [IOP Publishing], Volume: 75 Issue: 32 Pages: 85
(Invited) Analog HfO2-RRAM Switches for Neural Networks
ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 32 Pages: 85-94
Analog memristive synapse in spiking networks implementing unsupervised learning
Frontiers in neuroscience [Frontiers], Volume: 10 Pages: 482
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 13 Pages: 133504
PROCEEDINGS-IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS
Ultrasound [], Volume: 21 Pages: 24
Synaptic potentiation and depression in Al: HfO 2-based memristor
Microelectronic Engineering [Elsevier], Volume: 147 Pages: 41-44
Effect of Al doping on the retention behavior of HfO 2 resistive switching memories
Microelectronic Engineering [Elsevier], Volume: 147 Pages: 104-107
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
Applied Physics Letters [AIP Publishing LLC], Volume: 107 Issue: 2 Pages: 023504
Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly
ACS nano [American Chemical Society], Volume: 9 Issue: 3 Pages: 2518-2529
Formation and disruption of conductive filaments in a Hf [O. sub. 2]/TiN structure
Nanotechnology [], Volume: 25 Issue: 38
Formation and disruption of conductive filaments in a HfO2/TiN structure
Nanotechnology [IOP Publishing], Volume: 25 Issue: 38 Pages: 385705
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153506
Engineered fabrication of ordered arrays of Au–NiO–Au nanowires
Nanotechnology [IOP Publishing], Volume: 24 Issue: 4 Pages: 045302
Low-power resistive switching in Au/NiO/Au nanowire arrays
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 22 Pages: 223510
Effect of Au proximity on the LSMO surface: An ab initio study
Journal of magnetism and magnetic materials [North-Holland], Volume: 324 Issue: 17 Pages: 2659-2663
Nanosession: Valence Change Memories‐A Look Inside
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 233-245
Physics of Plasmas [AIP], Volume: 19 Issue: 6 Pages: 064701
Electrodeposition of Arrays of Au/NiO/Au Nanowire Heterostructures for ReRAM Applications
Meeting Abstracts [The Electrochemical Society], Issue: 45 Pages: 3294-3294
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 20 Pages: 206101
Correlation between growth dynamics and dielectric properties of epitaxial BaTiO3 films
Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 10 Pages: 102904
Additional information on Appl. Phys. Lett.
APPLIED PHYSICS LETTERS [], Volume: 101 Pages: 223510
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 5 Pages: 053511
Electrodeposition of Metal-Oxide-Metal Nanowire Heterostructures for ReRAM Applications
Electrochemical Society Meeting Abstracts 220 [The Electrochemical Society, Inc.], Issue: 35 Pages: 2226-2226
Epitaxial growth of Fe/BaTiO3 heterostructures
Thin Solid Films [Elsevier], Volume: 519 Issue: 17 Pages: 5804-5807
Journal of materials science [Springer US], Volume: 46 Issue: 12 Pages: 4157-4161
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 21 Pages: 211907
Sharp Fe/MgO/Ge (001) epitaxial heterostructures for tunneling junctions
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 8 Pages: 084909
Applied physics letters [American Institute of Physics], Volume: 98 Issue: 9 Pages: 092505
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 11 Pages: 113906
On‐Chip Manipulation of Protein‐Coated Magnetic Beads via Domain‐Wall Conduits
Advanced materials [WILEY‐VCH Verlag], Volume: 22 Issue: 24 Pages: 2706-2710
Physical Review B [American Physical Society], Volume: 81 Issue: 9 Pages: 094410
Physical Review B [Oak Ridge National Lab.(ORNL), Oak Ridge, TN (United States)], Volume: 81 Issue: 9
Physical Review B [American Physical Society], Volume: 80 Issue: 10 Pages: 104437
On-chip nano-manipulation of magnetic particles via domain walls conduits
arXiv preprint arXiv:0903.3542 [],
On-chip manipulation of magnetic nanoparticles through domain walls conduits
arXiv preprint arXiv:0903.3516 [],
On-chip micro-droplet dispenser with disposable structure
The 13th International Conference on Miniaturized Systems for Chemistry and Life Sciences [], Pages: 1778-1780
Microscopy and Microanalysis [Cambridge University Press], Volume: 14 Issue: S2 Pages: 1392
Microscopy and Microanalysis [Cambridge University Press], Volume: 14 Issue: S2 Pages: 1392-1393
arXiv preprint arXiv:0805.1813 [],
X-ray photoemission study of the Au∕ La 0.67 Sr 0.33 Mn O 3 interface formation
Journal of Applied Physics [American Institute of Physics], Volume: 103 Issue: 4 Pages: 044903
X-ray photoemission study of the Au
Journal of applied physics [American Institute of Physics], Volume: 103 Issue: 4
Decrease of the Curie temperature in La 0.67 Sr 0.33 MnO 3 thin films induced by Au capping
Materials Science and Engineering: B [Elsevier], Volume: 144 Issue: 1 Pages: 93-96
Decrease of the Curie temperature in La0. 67Sr0. 33MnO3 thin films induced by Au capping
Materials Science and Engineering: B [Elsevier], Volume: 144 Issue: 1-3 Pages: 93-96
Proximity effects induced by a gold layer on La 0.67 Sr 0.33 Mn O 3 thin films
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 10 Pages: 102506
Physical Review B [American Physical Society], Volume: 75 Issue: 9 Pages: 094418
Flux-charge characterizing of reset transition in bipolar resistive-switching memristive devices
Proc. 11th Spanish Conf. Electron Devices [],
HfO2-based memristors for neuromorphic applications
2016 IEEE International Symposium on Circuits and Systems (ISCAS) [IEEE], Pages: 393-396
Gradual set dynamics in HfO 2-based memristor driven by sub-threshold voltage pulses
2015 International Conference on Memristive Systems (MEMRISYS) [IEEE], Pages: 1-2
Manipulation at the nano-scale of single magnetic particles via domain walls conduits
2009 International Conference on Electromagnetics in Advanced Applications [IEEE], Pages: 837-840
Molecular simulations of micellar carriers in presence of high intense electric fields
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on [IEEE], Pages: 787-789
On-chip manipulation of single magnetic nano-particles via domain walls conduits
2009 9th IEEE Conference on Nanotechnology (IEEE-NANO) [IEEE], Pages: 485-486
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 [],
13th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2009 [Chemical and Biological Microsystems Society],
Chemical and Biological Microsystems Society [],
Memristive Devices for Brain-Inspired Computing [Woodhead Publishing], Pages: 17-61
Electrical AFM for the Analysis of Resistive Switching
Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 205-229