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Micro/Nano Electronics

In the field of Micro/Nano Electronics the Unit of Agrate has a long term and recognized expertise on logic and non-volatile memory devices, exploiting both classical and quantum phenomena, as well as systems and novel computing paradigms beyond the von-Neumann. The research activities are carried out focusing on several aspects, from advanced materials and nanofabrication tools, to the advanced characterization of materials and development of computational methodologies. In detail, the Agrate Brianza Unit contributes to:

 

Non-volatile memory and advanced logic devices:

(i) Resistive type of non-volatile memories, with focus on nanowire based PCM and oxide-RRAM

(ii) Logic devices based on 2D (silicene, MoS2 and other TMDs), and 1D and 0D (Si nanowires and Si quantum dots) for low power electronics.

(iii) High-dielectric constant materials for back-end MIM capacitors devoted to power management and analog applications

(iv) Materials for spintronics: magnetic tunnel junction and racetrack memory;

 

Enabling tools for nanoelectronics

(i) Development of advanced nanofabrication tools based on self-assembled materials

(ii) First principles spectroscopy and simulation of magnetic materials and nanostructures

 

Towards New Computation Paradigms

(i) Memristive devices as key elements for neuromorphic systems

(ii)Quantum computation systems: modeling/simulation of semiconducting Qubits. Characterization of CMOS compatible semiconductor Qubits.

Simulation and design of new materials by means of ab initio spectroscopy

Our final target is to determine what are the more promising materials for future ultra scaled electronic that may be based on quantum system: the realization of quantum memory, quantum computer,...

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