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The recent integration of silicene in field-effect transistors (FET) opened new challenges in the comprehension of the chemical and physical properties of this elusive two-dimensional allotropic form of silicon. Intense efforts have been devoted to the study of the epitaxial Silicene/Ag(111) system in order to elucidate the presence of Dirac fermion in analogy with graphene; strong hybridization effects in silicene superstructures on silver have been invoked as responsible for the disruption of π and π* bands. In this framework, the measured ambipolar effect in silicene-based FET characterized by a relatively high mobility, points out to a complex physics at the silicene-silver interface, demanding for a deeper comprehension of its details on the atomic scale. Here we elucidate the role of the metallic support in determining the physical properties of the Si/Ag interface, by means of optical techniques combined with …
International Society for Optics and Photonics
Publication date: 
23 Feb 2017

Eugenio Cinquanta, Guido Fratesi, Stefano dal Conte, Carlo Grazianetti, Francesco Scotognella, Salvatore Stagira, Caterina Vozzi, Giovanni Onida, Alessandro Molle

Biblio References: 
Volume: 10102 Pages: 101020J
Ultrafast Phenomena and Nanophotonics XXI