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Phase-change memory (PCM) cell is the most promising technology as post-flash nonvolatile memory (NVM). Among the different proposed cell structures, /spl mu/trench allows to simultaneously achieve low programming currents, small cell size, easy tunability and good dimensional control. Aim of this paper is to investigate the optimization and fine tuning capability of this cell architecture. Based on theoretical analysis and experimental results, the dependence of the PCM electrical parameters on the cell structure and on the geometric dimensions is assessed. An optimized /spl mu/trench cell with a programming current of 450 /spl mu/A at 1.5 V and a set resistance of 5 k/spl Omega/ is finally presented.
Publication date: 
16 Sep 2005

A Pirovano, F Pellizzer, A Redaelli, I Tortorelli, E Varesi, F Ottogalli, M Tosi, P Besana, R Cecchini, R Piva, M Magistretti, M Scaravaggi, G Mazzone, P Petruzza, F Bedeschi, T Marangon, A Modelli, Daniele Ielmini, Andrea Leonardo Lacaita, R Bez

Biblio References: 
Pages: 313-316
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.