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This chapter gives a general overview of the state-of-the-art of resistive switching random access memories (RRAM or ReRAM), which are metal/insulator/metal devices exhibiting resistance transition upon voltage application. They are also classified under the name of memristors or memristive devices. This chapter starts with an introduction to the various physical mechanisms, in relation to material science aspects, which produce resistance switching, including redox processes, ionic migration, metal–insulator phase transitions, conductive filament formation/dissolution, and metal/insulator barrier modifications. The presented physical mechanisms drive different macroscopic electric behavior (nonpolar and bipolar, volatile, and nonvolatile switching) with diverse performances, opportunities, and limitations. A specific section is dedicated to all these aspects and to the overview of the state-of-the-art of industrial …
Woodhead Publishing
Publication date: 
1 Jan 2020

Stefano Brivio, Stephan Menzel

Biblio References: 
Pages: 17-61
Memristive Devices for Brain-Inspired Computing