-A A +A
The temperature dependent resistance R (T) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in R (T) curves below≃ 29 K, which can be explained as an effect of intergranular Coulomb interaction in a granular system. While the magnetic contribution is the weakest compared to structural and Coulomb interaction related scattering processes, it is the only thickness independent process whereas the other two processes contribute more as the thickness decreases implying the role of disorder and granularity. On the contrary, the negative coefficient of resistance can be explained by electron interaction effect in disordered amorphous films.
Publication date: 
1 May 2015

G Venkat Swamy, PK Rout, Manju Singh, RK Rakshit

Biblio References: 
arXiv preprint arXiv:1505.05711