A study of a La-based high-k oxide to be employed as active dielectric in future scaled memory devices is presented. The focus will be held on LaxZr1−xO2−δ (x = 0.25) compound. In order to allow the integration of this material, its chemical interaction with an Al2O3 cap layer has been studied. Moreover, the electrical characteristics of these materials have been evaluated integrating them in capacitor structures. The rare earth-based ternary oxide is demonstrated to be a promising candidate for future non-volatile memory devices based on charge trapping structure.
1 Mar 2010
Volume: 87 Issue: 3 Pages: 290-293