Nanoscale dielectric films made of alumina grown by atomic layer deposition (ALD) have been implemented as high‐k dielectric material in organic light emitting transistors (OLETs). This leads to the reduction of both the threshold and operating bias regime of the devices while obtaining comparable light emission, when compared to our standard polymer‐based dielectric platform.
1 May 2016
Volume: 47 Issue: 1 Pages: 1737-1739
SID Symposium Digest of Technical Papers