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Electron spin resonance (ESR) is a natural candidate for quantum bit manipulation, provided that the confinement of a small number of electrons in a sufficiently small volume can be achieved. An important step is the development of low carrier density materials and structures in which the electron spins are isolated and can be controlled by ESR. We report on the realization of three low-density (n/sub 1/=1.77/spl times/10/sup 10/, n/sub 2/=4.5/spl times/10/sup 10/, and n/sub 3/=9/spl times/10/sup 10/ cm/sup -2/ without the help of a gate to deplete the channel) two-dimensional electron systems in GaAs-AlGaAs single quantum wells (QWs) and on the magnetoresistively detected electron spin resonance (MDESR) measurements in these samples. The MDESR has been characterized at /spl nu/=1 and /spl nu/=3 and the current intensity, microwave power, and temperature dependence have been studied. The …
Publication date: 
17 Jan 2005

Enrico Prati, Marco Fanciulli, Alexey Kovalev, Joshua D Caldwell, Clifford R Bowers, Flavio Capotondi, Giorgio Biasiol, Lucia Sorba

Biblio References: 
Volume: 4 Issue: 1 Pages: 100-105
IEEE transactions on nanotechnology