2020 | Agrate UNIT

Joaquin Faneca, Santiago Garcia-Cuevas Carrillo, Emanuele Gemo, Carlota Ruiz de Galarreta, Thalía Domínguez Bucio, Frederic Y Gardes, Harish Bhaskaran, Wolfram HP Pernice, C David Wright, Anna Baldycheva

2020-08-01

Biblio references: Volume: 10 Issue: 8 Pages: 1778-1791

Origin: Optical Materials Express

Thickness determination of anisotropic van der Waals crystals by Raman spectroscopy: the case of black phosphorus.

Gabriele Faraone, Emanuele Balduzzi, Christian Martella, Carlo Grazianetti, Alessandro Molle, Emiliano Bonera

2020-07-17

Biblio references: Volume: 31 Issue: 41 Pages: 415703

Origin: Nanotechnology

Simple technique for determining the refractive index of phase-change materials using near-infrared reflectometry

E Gemo, SV Kesava, C Ruiz De Galarreta, L Trimby, S García-Cuevas Carrillo, M Riede, A Baldycheva, A Alexeev, CD Wright

2020-07-01

Biblio references: Volume: 10 Issue: 7 Pages: 1675-1686

Origin: Optical Materials Express

Oxide-electrolyte thickness dependence diode-like threshold switching and high on/off ratio characteristics by using Al2O3 based CBRAM

Asim Senapati, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta, Siddheswar Maikap

2020-07-01

Biblio references: Volume: 9 Issue: 7 Pages: 1106

Origin: Electronics

Is all-electrical silicon quantum computing feasible in the long term?

Elena Ferraro, Enrico Prati

2020-06-15

Biblio references: Volume: 384 Issue: 17 Pages: 126352

Origin: Physics Letters A

Memristive devices for deep learning applications

Damien Bipin Rajendran Querlioz, Sabina Spiga, Abu Sebastian

2020-06-12

Biblio references: Pages: 313

Origin: Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications-Computational Memory, Deep Learning, and Spiking Neural Networks

Alternative memristor-based interconnect topologies for fast adaptive synchronization of chaotic circuits

Emerging Dirac materials for THz plasmonics

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Phase-Change Memories: Materials Science, Technological Applications and Perspectives

Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands

Thickness determination of anisotropic van der Waals crystals by Raman spectroscopy: the case of black phosphorus.

Simple technique for determining the refractive index of phase-change materials using near-infrared reflectometry

Oxide-electrolyte thickness dependence diode-like threshold switching and high on/off ratio characteristics by using Al2O3 based CBRAM

Is all-electrical silicon quantum computing feasible in the long term?

Memristive devices for deep learning applications

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