2016 | Agrate UNIT

(Invited) Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

Alessandro Molle, Carlo Grazianetti, Eugenio Cinquanta

2016-08-18

Biblio references: Volume: 75 Issue: 8 Pages: 703-709

Origin: ECS Transactions

Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

Alessandro Molle, Carlo Grazianetti, Eugenio Cinquanta

2016-08-18

Biblio references: Volume: 75 Issue: 8 Pages: 703

Origin: ECS Transactions

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Min Jae Sung, Alessandro Luzio, Won‐Tae Park, Ran Kim, Eliot Gann, Francesco Maddalena, Giuseppina Pace, Yong Xu, Dario Natali, Carlo De Falco, Long Dang, Christopher R McNeill, Mario Caironi, Yong‐Young Noh, Yun‐Hi Kim

2016-07-01

Biblio references: Volume: 26 Issue: 27 Pages: 4984-4997

Origin: Advanced Functional Materials

Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550° C

J‐L Battaglia, A Kusiak, C Gaborieau, Y Anguy, HT Nguyen, C Wiemer, R Fallica, D Campi, M Bernasconi, M Longo

2016-07-01

Biblio references: Volume: 10 Issue: 7 Pages: 544-548

Origin: physica status solidi (RRL)–Rapid Research Letters

An Organic Spin Valve Embedding a Self‐Assembled Monolayer of Organic Radicals

Lorenzo Poggini, Giuseppe Cucinotta, Abdul‐Muizz Pradipto, Marco Scarrozza, Paolo Barone, Andrea Caneschi, Patrizio Graziosi, Marco Calbucci, Raimondo Cecchini, Valentin Alek Dediu, Silvia Picozzi, Matteo Mannini, Roberta Sessoli

2016-07-01

Biblio references: Volume: 3 Issue: 14 Pages: 1500855

Origin: Advanced Materials Interfaces

Unipolar Resistive‐Switching Mechanisms

Ludovic Goux, Sabina Spiga

2016-06-22

Biblio references: Pages: 363-394

Origin: Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

Bottom‐Up Approaches for Resistive Switching Memories

Sabina Spiga, Takeshi Yanagida, Tomoji Kawai

2016-06-22

Biblio references: Pages: 661-694

Origin: Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

Ab initio simulations of pseudomorphic silicene and germanene bidimensional heterostructures

Alberto Debernardi, Luigi Marchetti

2016-06-21

Biblio references: Volume: 93 Issue: 24 Pages: 245426

Origin: Physical Review B

A study of SnS recrystallization by post deposition treatment

Simone Di Mare, Andrei Salavei, Daniele Menossi, Fabio Piccinelli, Paolo Bernardi, Elisa Artegiani, Arun Kumar, Gino Mariotto, Alessandro Romeo

2016-06-05

Biblio references: Issue: 16468525 Pages: 0431-0434

Origin: Proceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals

Alessandro Molle, Filippo Fabbri, Davide Campi, Alessio Lamperti, Enzo Rotunno, Eugenio Cinquanta, Laura Lazzarini, Daniel Kaplan, Venkataraman Swaminathan, Marco Bernasconi, Massimo Longo, Giancarlo Salviati

2016-06-01

Biblio references: Volume: 2 Issue: 6 Pages: 1600091

Origin: Advanced Electronic Materials

(Invited) Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550° C

An Organic Spin Valve Embedding a Self‐Assembled Monolayer of Organic Radicals

Unipolar Resistive‐Switching Mechanisms

Bottom‐Up Approaches for Resistive Switching Memories

Ab initio simulations of pseudomorphic silicene and germanene bidimensional heterostructures

A study of SnS recrystallization by post deposition treatment

Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals

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