2012 | Agrate UNIT

R Mantovan, HP Gunnlaugsson, D Naidoo, S Ólafsson, K Johnston, H Masenda, TE Mølholt, K Bharuth-Ram, M Fanciulli, HP Gislason, Guido Langouche, R Sielemann, G Weyer, Isolde Collaboration

2012-11-09

Biblio references: Volume: 24 Issue: 48 Pages: 485801

Origin: Journal of Physics: Condensed Matter

Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications

Gabriele Congedo, Alessio Lamperti, Olivier Salicio, Sabina Spiga

2012-11-06

Biblio references: Volume: 2 Issue: 1 Pages: N1

Origin: ECS Journal of Solid State Science and Technology

Electronic properties of pristine and Se doped [001] silicon nanowires: an ab initio study

G Petretto, A Debernardi, M Fanciulli

2012-11-01

Biblio references: Volume: 12 Issue: 11 Pages: 8704-8709

Origin: Journal of nanoscience and nanotechnology

Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material

Jean-Luc Battaglia, Vincent Schick, Andrzej Kusiak, Clément Rossignol, Claudia Wiemer, Alessio Lamperti

2012-10-01

Biblio references: Volume: 20 Issue: 7 Pages: 941-950

Origin: Inverse Problems in Science and Engineering

Pseudopotential-based first-principles approach to the magneto-optical Kerr effect: From metals to the inclusion of local fields and excitonic effects

Davide Sangalli, Andrea Marini, Alberto Debernardi

2012-09-27

Biblio references: Volume: 86 Issue: 12 Pages: 125139

Origin: Physical Review B

Paediatric spinal Langerhans cell histiocytosis requiring corpectomy and fusion at C7 and at Th8–Th9 levels

Asymmetric transmission and anomalous refraction in metal nanowires metasurface

Low-power resistive switching in Au/NiO/Au nanowire arrays

Geometrical effects on valley-orbital filling patterns in silicon quantum dots for robust qubit implementation

Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging

Fe charge state adjustment in ZnO upon ion implantation

Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications

Electronic properties of pristine and Se doped [001] silicon nanowires: an ab initio study

Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material

Pseudopotential-based first-principles approach to the magneto-optical Kerr effect: From metals to the inclusion of local fields and excitonic effects

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