2011 | Agrate UNIT

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

Xavier Jehl, B Roche, Marc Sanquer, B Voisin, Romain Wacquez, Veeresh Deshpande, Bernard Previtali, Maud Vinet, J Verduijn, GC Tettamanzi, S Rogge, D Kotekar-Patil, M Ruoff, D Kern, DA Wharam, M Belli, E Prati, M Fanciulli

2011-12-31

Biblio references: Volume: 7 Pages: 266-268

Origin: Procedia Computer Science

Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As

L Lamagna, A Molle, C Wiemer, S Spiga, C Grazianetti, G Congedo, M Fanciulli

2011-12-30

Biblio references: Volume: 159 Issue: 3 Pages: H220

Origin: Journal of The Electrochemical Society

Exchange-correlation effects in the monoclinic to tetragonal phase stabilization of yttrium-doped ZrO 2: A first-principles approach

Davide Sangalli, Alberto Debernardi

2011-12-27

Biblio references: Volume: 84 Issue: 21 Pages: 214113

Origin: Physical Review B

Switching quantum transport in a three donors silicon fin-field effect transistor

Guillaume Leti, Enrico Prati, Matteo Belli, Guido Petretto, Marco Fanciulli, Maud Vinet, Romain Wacquez, Marc Sanquer

2011-12-12

Biblio references: Volume: 99 Issue: 24 Pages: 242102

Origin: Applied Physics Letters

Circular dichroism in the optical second-harmonic emission of curved gold metal nanowires

A Belardini, M Centini Larciprete, M Centini, E Fazio, C Sibilia, D Chiappe, C Martella, A Toma, M Giordano, F Buatier De Mongeot

2011-12-12

Biblio references: Volume: 107 Issue: 25 Pages: 257401

Origin: Physical review letters

Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes

J Barzola-Quiquia, N Klingner, J Krüger, A Molle, P Esquinazi, A Leonhardt, MT Martinez

2011-12-08

Biblio references: Volume: 23 Issue: 1 Pages: 015707

Origin: Nanotechnology

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

C Wiemer, A Debernardi, A Lamperti, A Molle, O Salicio, L Lamagna, M Fanciulli

2011-12-05

Biblio references: Volume: 99 Issue: 23 Pages: 232907

Origin: Applied Physics Letters

Confinement effects and hyperfine structure in Se doped silicon nanowires

Guido Petretto, Alberto Debernardi, Marco Fanciulli

2011-11-09

Biblio references: Volume: 11 Issue: 11 Pages: 4509-4514

Origin: Nano letters

Reconstruction dependent reactivity of As-decapped In0. 53Ga0. 47As (001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

A Molle, L Lamagna, C Grazianetti, G Brammertz, C Merckling, M Caymax, S Spiga, M Fanciulli

2011-11-07

Biblio references: Volume: 99 Issue: 19 Pages: 193505

Origin: Applied Physics Letters

Reconstruction dependent reactivity of As-decapped In 0.53<//sub> Ga 0.47<//sub> As (001) surfaces and its influence on the electrical quality of the interface with …

A Molle, L Lamagna, C Grazianetti, G Brammertz, C Merckling, M Caymax, S Spiga, M Fanciulli

2011-11-07

Biblio references: Volume: 99 Issue: 19

Origin: Applied Physics Letters

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As

Exchange-correlation effects in the monoclinic to tetragonal phase stabilization of yttrium-doped ZrO 2: A first-principles approach

Switching quantum transport in a three donors silicon fin-field effect transistor

Circular dichroism in the optical second-harmonic emission of curved gold metal nanowires

Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

Confinement effects and hyperfine structure in Se doped silicon nanowires

Reconstruction dependent reactivity of As-decapped In0. 53Ga0. 47As (001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

Reconstruction dependent reactivity of As-decapped In 0.53<//sub> Ga 0.47<//sub> As (001) surfaces and its influence on the electrical quality of the interface with …

Pages

Scientific Productions

Units in Italy

Contact info

Link utili

You are here

Pages

Scientific Productions

Units in Italy

Contact info

Link utili