2008 | Agrate UNIT

M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, K Kopalko, R Jakieła, S Yatsunenko, E Przeździecka, P Kruszewski, N Huby, G Tallarida, S Ferrari

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2434-2438

Origin: Microelectronic Engineering

Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

HL Lu, G Scarel, XL Li, M Fanciulli

2008-12-01

Biblio references: Volume: 310 Issue: 24 Pages: 5464-5468

Origin: Journal of Crystal Growth

Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography

E Katsia, G Tallarida, B Kutrzeba-Kotowska, S Ferrari, E Bundgaard, R Sondergaard, FC Krebs

2008-12-01

Biblio references: Volume: 9 Issue: 6 Pages: 1044-1050

Origin: ORGANIC ELECTRONICS

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

A Lamperti, S Spiga, HL Lu, C Wiemer, M Perego, E Cianci, M Alia, M Fanciulli

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2425-2429

Origin: Microelectronic Engineering

Chemical vapor deposition of chalcogenide materials for phase-change memories

A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, M Longo, A Pirovano, Jan Siegel, W Gawelda, S Rushworth, C Giesen

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2338-2341

Origin: Microelectronic Engineering

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2 O 3 films upon annealing

Thermal evolution and mechanical properties of hard Ti–Cr–B–N and Ti–Al–Si–B–N coatings

Evidence of dangling bond electrical activity at the Ge/oxide interface

High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

Vertically stacked non-volatile memory devices–material considerations

Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Chemical vapor deposition of chalcogenide materials for phase-change memories

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