-A A +A
In this contribution, we investigate the electrical properties of thin (3–30 nm) Lu2O3 and Yb2O3 oxides grown on silicon by atomic layer depostion. Precursors with various ligands (e.g., cyclopentadienyls, or β-diketonates) are used as metal source, while water or ozone are used as oxygen source. Lu2O3 and Yb2O3 films exhibit a dielectric constant (κ) of 11± 1 and 10± 1, respectively. For both rare earth oxides, a low κ interlayer (IL) is formed at the film/silicon interface. Gate stacks with capacitance equivalent oxide thickness (CET) down to 3 nm exhibit low leakage current and well-shaped capacitance–voltage curves without frequency dispersion of the accumulation capacitance. A CET of 2.7± 0.1 nm and leakage of 4.5 × 10–4 A cm–2 were measured for the thinnest (3.5 nm) Lu2O3/IL/Si gate stack, and a CET of 3.3 ± 0.1 nm and leakage of 1 × 10–4 Acm–2 for the (4.5 nm) Yb2O3/IL …
Springer, Berlin, Heidelberg
Publication date: 
1 Jan 2007

Sabina Spiga, Claudia Wiemer, Giovanna Scarel, Omar Costa, Marco Fanciulli

Biblio References: 
Pages: 203-223
Rare Earth Oxide Thin Films