2010 | Agrate UNIT

Comparison of semiclassical transport formulations including quantum corrections for advanced devices with high-K gate stacks

FM Bufler, V Aubry-Fortuna, A Bournel, M Braccioli, P Dollfus, David Esseni, C Fiegna, F Gamiz, Marco De Michielis, Pierpaolo Palestri, J Saint-Martin, C Sampedro, E Sangiorgi, Luca Selmi, Paolo Toniutti

2010-10-26

Biblio references: Pages: 1-4

Origin: 2010 14th International Workshop on Computational Electronics

Surface Plasmon “Hot Spots” Detected By Near-field Polarization Spectroscopy

Francesco Tantussi, V Clericò, C Martella, Vasanthakumar Priya, Francesco Fuso, Maria Allegrini, A Toma, D Chiappe, C Boragno, F Buatier de Mongeot

2010-10-24

Biblio references: Pages: PDPB3

Origin: Frontiers in Optics

Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories

Sabina Spiga, Gabriele Congedo, Ugo Russo, Alessio Lamperti, Olivier Salicio, Francesco Driussi, Elisa Vianello

2010-09-14

Biblio references: Pages: 408-411

Origin: 2010 Proceedings of the European Solid State Device Research Conference

Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells

F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters

2010-05-16

Biblio references: Pages: 1-4

Origin: 2010 IEEE International Memory Workshop

Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics

Paolo Toniutti, Marco De Michielis, Pierpaolo Palestri, Francesco Driussi, David Esseni, Luca Selmi

2010-03-01

Biblio references: Pages: 65-68

Origin: Proc. Int. Conf. ULIS

Observation of long lived Fe 3+ paramagnetic states in ZnO following the implantation with non-3d elements

R Mantovan, Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Fanciulli, K Johnston, G Langouche, D Naidoo, S Ólafsson, R Sielemann, Gerd Weyer

2010-01-01

Biblio references:

Origin: 3rd HFI/NQI 2010

Lattice Location and Diffusion of Interstitial Fe in MgO

Torben Esmann Mølholt, R Mantovan, Haraldur Pall Gunnlaugsson, K Bharuth-Ram, M Fanciulli, K Johnston, Y Kobayashi, G Langouche, H Masenda, D Naidoo, S Ólafsson, R Sielemann, Axel Svane, Gerd Weyer

2010-01-01

Biblio references:

Origin: 3rd HFI/NQI 2010

Thermal stability of nanostructured coatings

Alberto Fabrizi, Marcello Cabibbo, Raimondo Cecchini, Stefano Spigarelli, Carlo Paternoster, Marie Haidopoulo, Ph V Kiryukhantsev-Korneev

2010-01-01

Biblio references: Volume: 653 Pages: 1-22

Origin: Materials science forum

Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells

Federico Nardi, Daniele Ielmini, Carlo Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters

2010-01-01

Biblio references: Pages: 66-69

Origin: 2010 IEEE International Memory Workshop

Comparison of semiclassical transport formulations including quantum corrections for advanced devices with high-K gate stacks

Surface Plasmon “Hot Spots” Detected By Near-field Polarization Spectroscopy

Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories

Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells

Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics

Observation of long lived Fe 3+ paramagnetic states in ZnO following the implantation with non-3d elements

Lattice Location and Diffusion of Interstitial Fe in MgO

Thermal stability of nanostructured coatings

Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells

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Scientific Productions

Units in Italy

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