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The AFSiD EU FP7 project addresses the issue of the behaviour of CMOS devices in the sub-10 nm regime where atomistic quantum effects start to dominate, to propose new functionalities arising from the control of single charges and spins on individual dopants in silicon. The core activities are thus design, fabrication and characterization of Single Atom Transistors (SAT), Single Electron Transistors (SET), and hybrid devices. The device preparation approach is fully top-down, being produced at the LETI CMOS facility.
The CNR activity within the project regarded low-temperature (down to 300 mK) quantum transport characterization in presence of magnetic field (up to 12 T) and microwave irradiation.
Coordinator: CEA
Partners: University of Melbourne, Eberhard Karls Universitaet Tuebingen, Consiglio Nazionale delle Ricerche, Technische Universiteit Delft, Hitachi Europe Limited.
Link to CORDIS page: http://cordis.europa.eu/project/rcn/85378_it.html .
prof. M. Fanciulli, Matteo Belli, Marco De Michielis (please, refer to the "people" section).

2008-02-01 to 2011-07-31