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Type: 
Journal
Description: 
The interfaces between high-k dielectrics, grown by atomic layer deposition, and semiconductors have been characterized using various electrically detected magnetic resonance spectroscopy techniques. The dominant center at the interface was found to be Pb0-like. Microwave contactless photoconductive resonance and defect-assisted spin dependent tunneling spectroscopies, performed at low temperatures, reveal also a signal which could be related to E’-like near interfacial oxide traps.
Publisher: 
Publication date: 
15 Feb 2006
Authors: 

MARCO Fanciulli, OMAR Costa, SILVIA Baldovino, SIMONE Cocco, GABRIELE Seguini, ENRICO Prati, GIOVANNA Scarel

Biblio References: 
Volume: 220 Pages: 263
Origin: 
NATO Science Series