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The controlled growth of chalcogenide nanoscaled phase change material structures can be important to facilitate integration and to enable complex architectures for phase change memory and other microelectronic applications. Here, the growth of Sb–Te and In–Ge–Te alloys by metal–organic chemical vapour deposition (MOCVD) on patterned substrates featured with an array of recesses (~ 130 nm features width) was investigated. High selectivity, with preferential growth on a CoSi 2 metallic layer at the recess bottom with respect to the surrounding SiO 2 masking layer, was obtained, leading to a single-step fabrication of arrays of high-aspect-ratio chalcogenide nanostructures. The growth selectivity, as well as the morphology, composition and microstructure of the grown nanostructures, as a function of the different MOCVD process parameters, were investigated by scanning electron microscopy, transmission …
IOP Publishing
Publication date: 
23 Jan 2020

R Cecchini, C Martella, A Lamperti, S Brivio, F Rossi, L Lazzarini, E Varesi, M Longo

Biblio References: 
Volume: 53 Issue: 14 Pages: 144002
Journal of Physics D: Applied Physics