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Sequential infiltration synthesis (SIS) consists in a controlled sequence of metal organic precursors and coreactant vapor exposure cycles of polymer films. Two aspects characterize an SIS process: precursor molecule diffusion within the polymer matrix and precursor molecule entrapment into polymer films via chemical reaction. In this paper, SIS process for the alumina synthesis is investigated using trimethylaluminum (TMA) and H2O in thin films of poly(styrene‐random‐methyl methacrylate) (P(S‐r‐MMA)) with variable MMA content. The amount of alumina grown in the P(S‐r‐MMA) films linearly depends on MMA content. A relatively low concentration of MMA in the copolymer matrix is enough to guarantee the volumetric growth of alumina in the polymer film. In pure polystyrene, metal oxide seeds grow in the subsurface region of the film. In situ dynamic spectroscopic ellipsometry analyses provide quantitative …
Publication date: 
1 Jun 2019

Federica E Caligiore, Daniele Nazzari, Elena Cianci, Katia Sparnacci, Michele Laus, Michele Perego, Gabriele Seguini

Biblio References: 
Volume: 6 Issue: 12 Pages: 1900503
Advanced Materials Interfaces