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Type: 
Journal
Description: 
The electrical activity of Ge dangling bonds is investigated at the interface between GeO2-passivated Ge(1 1 1) substrate and Al2O3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al2O3/GeO2/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (
Publisher: 
North-Holland
Publication date: 
1 Feb 2014
Authors: 

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Biblio References: 
Volume: 291 Pages: 3-5
Origin: 
Applied Surface Science