In this paper, bottom-oxide thickness (T bo) and program/erase stress effects on charge retention in SONOS Flash memory cells with FN programming are investigated. Utilizing a numerical analysis based on a multiple electron-trapping model to solve the Shockley-Read-Hall rate equations in nitride, we simulate the electron-retention behavior in a SONOS cell with T bo from 1.8 to 5.0 nm. In our model,...
1 Jan 2007
Volume: 54 Issue: 1 Pages: 115-123
IEEE Transactions on Electron Devices