The authors investigated the temperature dependence of transient and steady-state gate currents in HfO2 capacitors from 300to75K. They show that transient currents measured on very thin (5nm) HfO2 layers keep a power-law time dependence when temperature decreases to 75K, with only a small reduction in the current amplitude. Instead, the static gate leakage strongly decreases when temperature is reduced, also showing a change in the conduction mechanism. These results clearly demonstrate that transient currents in HfO2 dielectrics do not depend on the steady-state conduction mechanisms and are an issue that must be considered even at low temperatures.
American Institute of Physics
4 Sep 2006
Volume: 89 Issue: 10 Pages: 103504
Applied physics letters