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We approached the rate equation modeling of P dopant incorporation in Si nanocrystals (NCs) embedded in the SiO2 matrix by diffusion from a spatially separated solid source. The experimental approach allows the study of the microscopic parameters regulating the interaction between P and the already formed and stable NCs; at the same time, we investigated the diffusion of P in SiO2 matrices shedding light on the atomistic mechanism of P diffusion in SiO2. The model parameters were assessed by fitting of P diffusion profiles, measured by time of flight secondary ion mass spectrometry and calibrated by channeling Rutherford backscattering spectrometry. Transmission electron microscopy data provided the NC geometrical parameters. Simulations allowed quantitative description of the emission process of P by the source, the evolution of P diffusivity in the oxide, and P trapping/de-trapping at the SiO2/Si NCs …
Royal Society of Chemistry
Publication date: 
1 Jan 2016

Massimo Mastromatteo, Davide De Salvador, Enrico Napolitani, Elisa Arduca, Gabriele Seguini, Jacopo Frascaroli, Michele Perego, Giuseppe Nicotra, Corrado Spinella, Cristina Lenardi, Alberto Carnera

Biblio References: 
Volume: 4 Issue: 16 Pages: 3531-3539
Journal of Materials Chemistry C