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Type: 
Journal
Description: 
The growth of atomically thin MoS2 films is achieved by sulfurization of molybdenum oxide precursor films grown by atomic layer deposition. The quality features of the MoS2 films are engineered controlling the stoichiometry, morphology, and thickness of the precursors. The interface interaction between the precursor films and the substrates (SiO2 or sapphire) plays a key role in the MoS2 formation.
Publisher: 
Publication date: 
1 Oct 2016
Authors: 

Christian Martella, Pierpaolo Melloni, Eugenio Cinquanta, Elena Cianci, Mario Alia, Massimo Longo, Alessio Lamperti, Silvia Vangelista, Marco Fanciulli, Alessandro Molle

Biblio References: 
Volume: 2 Issue: 10 Pages: 1600330
Origin: 
Advanced Electronic Materials