-A A +A
Type: 
Journal
Description: 
Dysprosium scandate DyScOx with a κ value of ∼20 has been investigated as blocking dielectric in charge trapping memory capacitors. DyScOx films with 28 and 18 nm thicknesses are deposited by atomic layer deposition on two different kinds of silicon nitride used as charge trapping layer, while SiO2 is used as tunnel oxide and TaN is used as metal gate. Memory capacitors with Al2O3 as blocking layer with similar equivalent oxide thickness (EOT) to DyScOx are also characterized as benchmarks. DyScOx thermal stability on both Si3N4 and Si-rich SiN at annealing temperatures up to 900 °C demonstrates the complementary metal-oxide semiconductor process compatibility of the oxide. Especially when deposited on Si-rich SiN, comparable program and slightly better retention performance with Al2O3 are observed for DyScOx, whereas erase still needs to be improved. Some variations in the electrical …
Publisher: 
AVS
Publication date: 
26 Jan 2011
Authors: 

G Congedo, S Spiga, U Russo, A Lamperti, O Salicio, E Cianci, M Fanciulli

Biblio References: 
Volume: 29 Issue: 1 Pages: 01AE04
Origin: 
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena