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The possibility to use semiconducting or metallic nanocrystals (ncs) embedded in a SiO2 matrix as charge storage elements in novel non volatile memory devices has been widely explored in the last ten years. The replacement of the continuous polysilicon layer of a conventional flash memory device by a 2-dimensional nanoparticle array presents several advantages but the fundamental trade-off between programming and data retention characteristics has not been overcome yet. The main problem is the limited retention time basically due to charge loss by leakage current through the ultra-thin SiO2 tunnelling dielectric. A longer retention time can be achieved by increasing the tunnel oxide thickness. This however implies higher operating voltages and consequently a reduced write/erase speed. Using high-k materials for tunnel and/or gate oxide it is in principle possible to achieve the goal of a low voltage non …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2006

Marco Fanciulli, Michele Perego, Caroline Bonafos, Anas Mouti, Sylvie Schamm, Gerard Benassayag

Biblio References: 
Volume: 51 Pages: 156-166
Advances in Science and Technology