-A A +A
Type: 
Journal
Description: 
The current status of the investigation of defects in silicon nanowires and at the interface between Si and its oxide in 1D nanostructures is reviewed and discussed. The paper concentrates on nanowires produced by metal assisted chemical etching. The role of defects at the interface between the semiconductor and its oxide and of hydrogen in passivating donor atoms is addressed.
Publisher: 
IOP Publishing
Publication date: 
22 Jan 2016
Authors: 

M Fanciulli, M Belli, S Paleari, A Lamperti, M Sironi, A Pizio

Biblio References: 
Volume: 5 Issue: 4 Pages: P3138
Origin: 
ECS Journal of Solid State Science and Technology