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Type: 
Conference
Description: 
We explain variability observed for the resonant tunnelling transport through donors in scaled silicon nanowires by the influence of charge configuration changes at the edges between the channel and the source-drain regions. This charge configuration is remarkably robust with respect to ageing effects, thermal cycling and the associated Id-Vg characteristics at low temperature constitute a real ldquoelectro-fingerprintrdquo for the samples. This stability is prerequisite for applications based on the gate control of single donor orbitals in nanoscale CMOS devices.
Publisher: 
IEEE
Publication date: 
18 Mar 2009
Authors: 

M Pierre, X Jehl, R Wacquez, M Vinet, M Sanquer, M Belli, E Prati, M Fanciulli, J Verduijn, GC Tettamanzi, GP Lansbergen, S Rogge, M Ruoff, M Fleischer, D Wharam, D Kern

Biblio References: 
Pages: 249-252
Origin: 
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on