The structural and chemical details of GeO2∕Ge layers grown on In0.15Ga0.85As substrates by molecular beam deposition were studied in situ by diffraction and spectroscopic techniques. The formation of semiconductor-oxygen bonds at the Ge∕In0.15Ga0.85As interface, which may play a decisive role in dictating the quality of the Ge passivation, was assessed after using two different surface preparations, namely Ar sputtering and atomic hydrogen cleaning.
American Institute of Physics
29 Sep 2008
Volume: 93 Issue: 13 Pages: 133504
Applied Physics Letters