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Despite a renewed interest in Ge as a competitor with Si for a broad range of electronic applications, the microstructure and the electronic properties of the dangling bonds that, in analogy with Si, are expected at the Ge/oxide interface have escaped a firm spectroscopy observation and characterization. Clear evidence based on contactless electrically detected magnetic resonance spectroscopy of a dangling bond at the Ge (111)/GeO 2 interface is reported in this Letter. This result supports the similarity between dangling bonds at the Si (111)/oxide and Ge (111)/oxide interfaces, both showing C 3 v trigonal point symmetry with the main axis oriented along the⟨ 111⟩ direction. In contrast, at the Ge (001)/oxide interface the absence of the trigonal center in favor of a lower symmetry dangling bond marks the difference with the Si (001)/oxide interface, where both centers are present and the one having higher point …
American Physical Society
Publication date: 
15 May 2013

Stefano Paleari, Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Biblio References: 
Volume: 110 Issue: 20 Pages: 206101
Physical review letters