The symposium aims to address the new challenges faced by the semiconductor community related to the development of alternative and advanced methodologies to control doping at the nanoscale. The symposium is conceived as a multidisciplinary platform that gathers researchers coming from academia and industry and promotes interactions among scientists and engineers working on all the aspects of semiconductor doping, ranging from fundamental physics and material science to the technological implementation and the final application in functional devices. The call for papers is now open and the deadline for abstract submission is June 6th. If you wan to submit an abstract you can follow this link: abstract submission. For more information about this symposium please contact Michele Perego or Enrico Napolitani that are members of the organizing committee

Hot topics to be covered by the symposium:

  • Fundamental aspects of doping and applications in nanoelectronics, (thermo)photovoltaics, photonics and quantum computing.
  • Deterministic doping. Defect and dopant-defect engineering.
  • Alternative doping strategies: monolayer doping, epitaxial doping, single ion implantation, STM lithography
  • Electrical and optical Hyperdoping.
  • Out of equilibrium processes: laser annealing, flash lamp annealing, RF annealing, phase transitions (s/s and l/s), (single) ion implantation, plasma immersion ion implantation.
  • Substitutional and proximity doping, defect engineering of 2D semiconductors:
  • Simulations of materials, processes, electrical and optical properties related to doping.
  • Doping of bulk and nanostructured semiconductors: Si, Ge, diamond, group IV alloys, III-V and II-VI compounds and alloys, 2D semiconductors.
  • Characterization techniques and issues related to doping: 3D, structural, chemical, electrical and optical, single atoms, defects, phase separations, layered materials.

List of confirmed invited speakers:

  • Yaping Dan - (Shanghai University) “Atomically Thin Delta Doping by Flash Lamp Annealing
  • Luca Camilli - (University of Roma Tor Vergata) “Doping of 2D Materials
  • Joaquín Fernández Rossier - (INL) “Simulation of 2D Semiconductors
  • Michele Laus - (University of Eastern Piedmont) “Doping of Semiconductors by Polymers Terminated with a Dopant Containing Moieties
  • Roger Webb - (University of Surrey) “The Application of Ion Beams for Solid State Quantum Technologies
  • Paul Stradins - (NREL) “Doping Solutions for Advanced Si Photovoltaics
  • Ray Duffy - (Tyndall National Institute) “3D to 2D, Traditional and New Doping Challenges at the Nanoscale
  • Naoto Horiguchi - (IMEC) “Doping Issues for Nanoelectronics and Ultrascaled Devices
  • Lorenzo Rigutti - (Rouen University) “3D Dopant Profiling by Atom Probe Tomography
  • Jose Menendez - (Arizona State University) “Properties of in-situ Doped Ge an GeSn Films with Ultra-High Carrier Concentrations
  • Kai Nordlund - (University of Helsinki) “Molecular Dynamics of Ion Implantation in Wide Bandgap Semiconductors
  • Antonino La Magna - (CNR-IMM) “Atomistic Simulation of Ultra-Fast Annealing Processes


All the attendees are invited to submit a paper to the special issue about "Doping at the nanoscale: new challenges and advanced applications" that will be published in the Journal Materials Science in Semiconductor Processing (Elsevier).


2022-05-12 to 2022-10-12